STMicroelectronics BUL310
- Part Number:
- BUL310
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2846867-BUL310
- Description:
- TRANS NPN 500V 5A TO-220
- Datasheet:
- BUL310
STMicroelectronics BUL310 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BUL310.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC500V
- Max Power Dissipation75W
- Current Rating5A
- Base Part NumberBUL310
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation75W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)500V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 3A 2.5V
- Current - Collector Cutoff (Max)250μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1.1V @ 600mA, 3A
- Collector Emitter Breakdown Voltage500V
- Collector Emitter Saturation Voltage1.1V
- Collector Base Voltage (VCBO)1kV
- Emitter Base Voltage (VEBO)9V
- hFE Min6
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUL310 Overview
DC current gain in this device equals 6 @ 3A 2.5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 600mA, 3A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
BUL310 Features
the DC current gain for this device is 6 @ 3A 2.5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
BUL310 Applications
There are a lot of STMicroelectronics
BUL310 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 6 @ 3A 2.5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 600mA, 3A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 5A current rating.In extreme cases, the collector current can be as low as 5A volts.
BUL310 Features
the DC current gain for this device is 6 @ 3A 2.5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
BUL310 Applications
There are a lot of STMicroelectronics
BUL310 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BUL310 More Descriptions
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 500V 5A 3-Pin(3 Tab) TO-220 Tube
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 500V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 5A; Current Ic Continuous a Max: 3A; Current Ic hFE: 3A; Hfe Min: 10; Power Dissipation Ptot Max: 75W; Voltage Vcbo: 1kV
Trans GP BJT NPN 500V 5A 3-Pin(3 Tab) TO-220 Tube
Bipolar Transistors - BJT NPN Hi-Volt Fast Sw
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 500V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Collector Emitter Saturation Voltage Vce(on): 500mV; Continuous Collector Current Ic Max: 5A; Current Ic Continuous a Max: 3A; Current Ic hFE: 3A; Hfe Min: 10; Power Dissipation Ptot Max: 75W; Voltage Vcbo: 1kV
The three parts on the right have similar specifications to BUL310.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePower - MaxTerminal PositionConfigurationCase ConnectionLifecycle StatusFactory Lead TimeContact PlatingView Compare
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BUL310Through HoleThrough HoleTO-220-33SILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Tin (Sn)HIGH RELIABILITYOther Transistors500V75W5ABUL31031Single75WSWITCHINGNPNNPN500V5A6 @ 3A 2.5V250μATO-220AB1.1V @ 600mA, 3A500V1.1V1kV9V69.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------
-
Through HoleThrough HoleTO-220-33SILICON150°C TJTubee3yesObsolete3 (168 Hours)3EAR99Tin (Sn)-Other Transistors-60W-BUL3N731Single-SWITCHINGNPNNPN400V3A18 @ 700mA 5V100μATO-220AB500mV @ 200mA, 1A400V-700V10V10----NoROHS3 CompliantLead Free60W------
-
Through HoleThrough HoleTO-220-3 Full Pack3SILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn) - annealed-Other Transistors-36W-BUL31031-36WSWITCHINGNPNNPN500V5A6 @ 3A 2.5V250μATO-220AB1.1V @ 600mA, 3A500V1.1V1kV9V69.3mm10.4mm4.6mmNo SVHCNoROHS3 Compliant--SINGLESINGLEISOLATED---
-
Through HoleThrough HoleTO-220-33SILICON150°C TJTubee3-Active1 (Unlimited)3EAR99--Other Transistors450V70W4ABUL3931Single70WSWITCHINGNPNNPN450V4A10 @ 10mA 5V100μATO-220AB1.1V @ 500mA, 2.5A450V1.1V850V9V49.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free----ACTIVE (Last Updated: 8 months ago)8 WeeksTin
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