Nexperia USA Inc. BUK9Y25-80E,115

Name: BUK9Y25-80E,115
Brand: Nexperia USA Inc.
SKU: 2485321-BUK9Y25-80E,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9Y25-80E,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2485321-BUK9Y25-80E,115

Description:: MOSFET N-CH 80V LFPAK

ECAD Model:

Datasheet:: BUK9Y25-80E,115

Specifications

Nexperia USA Inc. BUK9Y25-80E,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9Y25-80E,115.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
4
Material
Metal
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Color
Black
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
95W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
11.6 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
27m Ω @ 10A, 5V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2703pF @ 25V
Current - Continuous Drain (Id) @ 25°C
37A Tc
Gate Charge (Qg) (Max) @ Vgs
17.1nC @ 5V
Rise Time
17.2ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±10V
Fall Time (Typ)
15.3 ns
Turn-Off Delay Time
23.9 ns
Continuous Drain Current (ID)
37A
JEDEC-95 Code
MO-235
Gate to Source Voltage (Vgs)
15V
Max Dual Supply Voltage
80V
Drain-source On Resistance-Max
0.027Ohm
Drain to Source Breakdown Voltage
80V
Diameter
12.7mm
Height
15.875mm
RoHS Status
ROHS3 Compliant

Description

BUK9Y25-80E,115 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2703pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 37A.With a drain-source breakdown voltage of 80V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 80V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23.9 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 80V.Using drive voltage (5V 10V) reduces this device's overall power consumption.

BUK9Y25-80E,115 Features
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 23.9 ns

BUK9Y25-80E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y25-80E,115 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BUK9Y25-80E,115 More Descriptions

BUK9Y25-80E - N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56
Mosfet, Aec-Q101, N-Ch, 80V, 37A, Lfpak56 Rohs Compliant: Yes |Nexperia BUK9Y25-80E,115
Power Field-Effect Transistor, 37A I(D), 80V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Product Comparison

The three parts on the right have similar specifications to BUK9Y25-80E,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Color

Additional Feature

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Diameter

Height

RoHS Status

Supplier Device Package

Drain to Source Voltage (Vdss)

Transistor Element Material

ECCN Code

HTS Code

Subcategory

Terminal Position

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
BUK9Y25-80E,115

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

Metal

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101

2013

e3

Active

1 (Unlimited)

4

Tin (Sn)

Black

AVALANCHE RATED

MOSFET (Metal Oxide)

GULL WING

260

not_compliant

30

4

1

1

95W Tc

Single

ENHANCEMENT MODE

DRAIN

11.6 ns

N-Channel

SWITCHING

27m Ω @ 10A, 5V

2.1V @ 1mA

2703pF @ 25V

37A Tc

17.1nC @ 5V

17.2ns

5V 10V

±10V

15.3 ns

23.9 ns

37A

MO-235

15V

80V

0.027Ohm

80V

12.7mm

15.875mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9515-60E,127

NXP USA Inc.

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

-

Obsolete

3 (168 Hours)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

96W Tc

-

-

-

-

N-Channel

-

13mOhm @ 15A, 10V

2.1V @ 1mA

2.651pF @ 25V

54A Tc

20.5nC @ 5V

-

5V 10V

±10V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

TO-220AB

60V

-

-

-

-

-

-

-

-

-

-

-

-

BUK9Y25-80E,115 vs BUK9515-60E,127
BUK9516-75B,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

2000

e3

Obsolete

1 (Unlimited)

3

Tin (Sn)

-

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

-

NOT SPECIFIED

-

NOT SPECIFIED

3

1

-

157W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

14m Ω @ 25A, 10V

2V @ 1mA

4034pF @ 25V

67A Tc

35nC @ 5V

-

4.5V 10V

±15V

-

-

-

TO-220AB

-

-

0.018Ohm

-

-

-

ROHS3 Compliant

-

75V

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

67A

270A

75V

140 mJ

BUK9Y25-80E,115 vs BUK9516-75B,127
BUK9520-100A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

NO

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

NOT SPECIFIED

compliant

NOT SPECIFIED

3

1

-

200W Tc

-

ENHANCEMENT MODE

DRAIN

-

N-Channel

SWITCHING

19m Ω @ 25A, 10V

2V @ 1mA

6385pF @ 25V

63A Tc

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

0.022Ohm

-

-

-

-

-

100V

SILICON

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

63A

253A

100V

420 mJ

BUK9Y25-80E,115 vs BUK9520-100A,127