Nexperia USA Inc. BUK9Y19-75B,115

Name: BUK9Y19-75B,115
Brand: Nexperia USA Inc.
SKU: 2478144-BUK9Y19-75B,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9Y19-75B,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478144-BUK9Y19-75B,115

Description:: MOSFET N-CH 75V 48.2A LFPAK

ECAD Model:

Datasheet:: BUK9Y19-75B,115

Specifications

Nexperia USA Inc. BUK9Y19-75B,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9Y19-75B,115.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
106W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
106W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.15V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
3096pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48.2A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 5V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±15V
Fall Time (Typ)
21 ns
Turn-Off Delay Time
77 ns
Continuous Drain Current (ID)
48.2A
JEDEC-95 Code
MO-235
Gate to Source Voltage (Vgs)
15V
Max Dual Supply Voltage
75V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUK9Y19-75B,115 Overview
The maximum input capacitance of this device is 3096pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 48.2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 77 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 75V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.

BUK9Y19-75B,115 Features
a continuous drain current (ID) of 48.2A
the turn-off delay time is 77 ns

BUK9Y19-75B,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y19-75B,115 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

BUK9Y19-75B,115 More Descriptions

BUK9Y19 Series 75 V 19 mOhm SMT N-Channel Logic Level MOSFET - LFPAK-56
Single N-Channel 75 V 19 mOhm 30 nC 106 W Silicon SMT Mosfet - LFPAK-4
Mosfet, N Channel, 75V, 48.2A, Lfpak; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:48.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.65V Rohs Compliant: Yes |Nexperia BUK9Y19-75B,115
Power Field-Effect Transistor, 48.2A I(D), 75V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Product Comparison

The three parts on the right have similar specifications to BUK9Y19-75B,115.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Radiation Hardening

RoHS Status

Lead Free

ECCN Code

Terminal Finish

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Additional Feature

View Compare
BUK9Y19-75B,115

Nexperia USA Inc.

12 Weeks

Tin

Surface Mount

SC-100, SOT-669

NO

4

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

e3

Active

1 (Unlimited)

4

MOSFET (Metal Oxide)

SINGLE

THROUGH-HOLE

4

1

SINGLE WITH BUILT-IN DIODE

106W Tc

ENHANCEMENT MODE

106W

DRAIN

13 ns

N-Channel

SWITCHING

18m Ω @ 20A, 10V

2.15V @ 1mA

3096pF @ 25V

48.2A Tc

30nC @ 5V

11ns

5V 10V

±15V

21 ns

77 ns

48.2A

MO-235

15V

75V

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9575-100A,127

Nexperia USA Inc.

-

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

SINGLE

-

3

1

SINGLE WITH BUILT-IN DIODE

99W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

72m Ω @ 10A, 10V

2V @ 1mA

1704pF @ 25V

23A Tc

-

-

4.5V 10V

±15V

-

-

-

TO-220AB

-

-

-

-

-

EAR99

Tin (Sn)

8541.29.00.75

FET General Purpose Power

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

100V

23A

0.084Ohm

91A

100V

100 mJ

-

BUK9Y19-75B,115 vs BUK9575-100A,127
BUK9520-100A,127

Nexperia USA Inc.

-

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

SINGLE

-

3

1

SINGLE WITH BUILT-IN DIODE

200W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

19m Ω @ 25A, 10V

2V @ 1mA

6385pF @ 25V

63A Tc

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

-

-

-

EAR99

Tin (Sn)

8541.29.00.75

FET General Purpose Power

NOT SPECIFIED

compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

100V

63A

0.022Ohm

253A

100V

420 mJ

-

BUK9Y19-75B,115 vs BUK9520-100A,127
BUK9520-55A,127

NXP USA Inc.

-

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

2010

e3

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

SINGLE

-

3

1

SINGLE WITH BUILT-IN DIODE

118W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

18m Ω @ 25A, 10V

2V @ 1mA

2210pF @ 25V

54A Tc

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

-

ROHS3 Compliant

-

EAR99

Matte Tin (Sn)

8541.29.00.75

FET General Purpose Power

NOT SPECIFIED

-

NOT SPECIFIED

R-PSFM-T3

Not Qualified

55V

54A

0.021Ohm

217A

55V

115 mJ

LOGIC LEVEL COMPATIBLE

BUK9Y19-75B,115 vs BUK9520-55A,127