Nexperia USA Inc. BUK9Y15-60E,115

Name: BUK9Y15-60E,115
Brand: Nexperia USA Inc.
SKU: 2478599-BUK9Y15-60E,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9Y15-60E,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2478599-BUK9Y15-60E,115

Description:: MOSFET N-CH 60V 53A LFPAK

ECAD Model:

Datasheet:: BUK9Y15-60E,115

Specifications

Nexperia USA Inc. BUK9Y15-60E,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9Y15-60E,115.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Pin Count
4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
95W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
95W
Case Connection
DRAIN
Turn On Delay Time
11.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2603pF @ 25V
Current - Continuous Drain (Id) @ 25°C
53A Tc
Gate Charge (Qg) (Max) @ Vgs
17.2nC @ 5V
Rise Time
17.3ns
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±10V
Fall Time (Typ)
15.3 ns
Turn-Off Delay Time
25.2 ns
Continuous Drain Current (ID)
53A
JEDEC-95 Code
MO-235
Gate to Source Voltage (Vgs)
10V
Max Dual Supply Voltage
60V
Drain to Source Breakdown Voltage
60V
RoHS Status
ROHS3 Compliant

Description

BUK9Y15-60E,115 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2603pF @ 25V.This device has a continuous drain current (ID) of [53A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25.2 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (5V).

BUK9Y15-60E,115 Features
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25.2 ns

BUK9Y15-60E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y15-60E,115 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BUK9Y15-60E,115 More Descriptions

BUK9Y15-60E - N-channel 60 V, 15 mΩ logic level MOSFET in LFPAK56
Single N-Channel 60 V 33.9 mOhm 17.2 nC 95 W Silicon SMT Mosfet - LFPAK-56
Power Field-Effect Transistor, 53A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

Product Comparison

The three parts on the right have similar specifications to BUK9Y15-60E,115.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Terminal Form

Reach Compliance Code

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

RoHS Status

ECCN Code

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
BUK9Y15-60E,115

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2014

e3

Active

1 (Unlimited)

4

Tin (Sn)

AVALANCHE RATED

MOSFET (Metal Oxide)

GULL WING

not_compliant

4

1

1

95W Tc

Single

ENHANCEMENT MODE

95W

DRAIN

11.4 ns

N-Channel

SWITCHING

13m Ω @ 15A, 10V

2.1V @ 1mA

2603pF @ 25V

53A Tc

17.2nC @ 5V

17.3ns

5V

±10V

15.3 ns

25.2 ns

53A

MO-235

10V

60V

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9509-75A,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

2008

e3

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

3

1

-

230W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

8.5m Ω @ 25A, 10V

2V @ 1mA

8840pF @ 25V

75A Tj

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

-

ROHS3 Compliant

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

75V

75A

0.00995Ohm

440A

75V

562 mJ

BUK9Y15-60E,115 vs BUK9509-75A,127
BUK9516-75B,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

2000

e3

Obsolete

1 (Unlimited)

3

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

-

-

3

1

-

157W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

14m Ω @ 25A, 10V

2V @ 1mA

4034pF @ 25V

67A Tc

35nC @ 5V

-

4.5V 10V

±15V

-

-

-

TO-220AB

-

-

-

ROHS3 Compliant

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

75V

67A

0.018Ohm

270A

75V

140 mJ

BUK9Y15-60E,115 vs BUK9516-75B,127
BUK9520-55A,127

NXP USA Inc.

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

2010

e3

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

-

-

3

1

-

118W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

18m Ω @ 25A, 10V

2V @ 1mA

2210pF @ 25V

54A Tc

-

-

4.5V 10V

±10V

-

-

-

TO-220AB

-

-

-

ROHS3 Compliant

EAR99

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

55V

54A

0.021Ohm

217A

55V

115 mJ

BUK9Y15-60E,115 vs BUK9520-55A,127