Nexperia USA Inc. BUK9M42-60EX

Name: BUK9M42-60EX
Brand: Nexperia USA Inc.
SKU: 2485154-BUK9M42-60EX
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9M42-60EX

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2485154-BUK9M42-60EX

Description:: MOSFET N-CH 60V 22A LFPAK

ECAD Model:

Datasheet:: BUK9M42-60EX

Specifications

Nexperia USA Inc. BUK9M42-60EX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9M42-60EX.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-1210, 8-LFPAK33
Supplier Device Package
LFPAK33
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
44W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
37mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
867pF @ 25V
Current - Continuous Drain (Id) @ 25°C
22A Tc
Gate Charge (Qg) (Max) @ Vgs
8.3nC @ 5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
5V
Vgs (Max)
±10V
Continuous Drain Current (ID)
22A
Input Capacitance
867pF
Drain to Source Resistance
30mOhm
Rds On Max
37 mΩ
RoHS Status
ROHS3 Compliant

Description

BUK9M42-60EX Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 867pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).This device has a drain-to-source resistance of 30mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.

BUK9M42-60EX Features
a continuous drain current (ID) of 22A
single MOSFETs transistor is 30mOhm
a 60V drain to source voltage (Vdss)

BUK9M42-60EX Applications
There are a lot of Nexperia USA Inc.
BUK9M42-60EX applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

BUK9M42-60EX More Descriptions

BUK9M42-60E - N-channel 60 V, 42 mΩ logic level MOSFET in LFPAK33
Trans MOSFET N-CH 60V 22A Automotive 8-Pin LFPAK EP T/R
MOSFET, AEC-Q101, N-CH, 60V, SOT-1210; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.03ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 44W; Transistor Case Style: SOT-1210; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
ELITE PROGRAM PART - BUK9M42-60E/SOT1210/mLFPAK
Power Field-Effect Transistor, 22A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to BUK9M42-60EX.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Input Capacitance

Drain to Source Resistance

Rds On Max

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Reach Compliance Code

View Compare
BUK9M42-60EX

Nexperia USA Inc.

26 Weeks

Surface Mount

Surface Mount

SOT-1210, 8-LFPAK33

LFPAK33

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2016

Active

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

44W Tc

N-Channel

37mOhm @ 5A, 10V

2.1V @ 1mA

867pF @ 25V

22A Tc

8.3nC @ 5V

60V

5V

±10V

22A

867pF

30mOhm

37 mΩ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9516-75B,127

NXP USA Inc.

-

-

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

TrenchMOS™

2000

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

157W Tc

N-Channel

14m Ω @ 25A, 10V

2V @ 1mA

4034pF @ 25V

67A Tc

35nC @ 5V

75V

4.5V 10V

±15V

-

-

-

-

ROHS3 Compliant

NO

SILICON

e3

3

EAR99

Tin (Sn)

LOGIC LEVEL COMPATIBLE

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

67A

0.018Ohm

270A

75V

140 mJ

-

BUK9M42-60EX vs BUK9516-75B,127
BUK9520-100A,127

Nexperia USA Inc.

-

-

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

200W Tc

N-Channel

19m Ω @ 25A, 10V

2V @ 1mA

6385pF @ 25V

63A Tc

-

100V

4.5V 10V

±10V

-

-

-

-

-

NO

SILICON

e3

3

EAR99

Tin (Sn)

-

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

63A

0.022Ohm

253A

100V

420 mJ

compliant

BUK9M42-60EX vs BUK9520-100A,127
BUK9520-55A,127

NXP USA Inc.

-

-

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

TrenchMOS™

2010

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

118W Tc

N-Channel

18m Ω @ 25A, 10V

2V @ 1mA

2210pF @ 25V

54A Tc

-

55V

4.5V 10V

±10V

-

-

-

-

ROHS3 Compliant

NO

SILICON

e3

3

EAR99

Matte Tin (Sn)

LOGIC LEVEL COMPATIBLE

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

54A

0.021Ohm

217A

55V

115 mJ

-

BUK9M42-60EX vs BUK9520-55A,127