BUK9529-100B,127

Nexperia USA Inc. BUK9529-100B,127

Part Number:
BUK9529-100B,127
Manufacturer:
Nexperia USA Inc.
Ventron No:
2489934-BUK9529-100B,127
Description:
MOSFET N-CH 100V 46A TO220AB
ECAD Model:
Datasheet:
BUK9529-100B

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Specifications
Nexperia USA Inc. BUK9529-100B,127 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9529-100B,127.
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    TrenchMOS™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • HTS Code
    8541.29.00.75
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    157W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    157W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    27m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    46A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 5V
  • Rise Time
    86ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±15V
  • Fall Time (Typ)
    46 ns
  • Turn-Off Delay Time
    96 ns
  • Continuous Drain Current (ID)
    46A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    15V
  • Max Dual Supply Voltage
    100V
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    186A
  • Avalanche Energy Rating (Eas)
    152 mJ
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
BUK9529-100B,127 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 152 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 46A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 96 ns.Peak drain current for this device is 186A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

BUK9529-100B,127 Features
the avalanche energy rating (Eas) is 152 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 186A.


BUK9529-100B,127 Applications
There are a lot of Nexperia USA Inc.
BUK9529-100B,127 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
BUK9529-100B,127 More Descriptions
Trans MOSFET N-CH 100V 46A Automotive 3-Pin(3 Tab) TO-220AB Rail
N-channel TrenchMOS logic level FET
STANDARD MARKING * HORIZONTAL, RAIL PACK
Product Comparison
The three parts on the right have similar specifications to BUK9529-100B,127.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Subcategory
    Technology
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    Published
    Drain to Source Voltage (Vdss)
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Reach Compliance Code
    View Compare
  • BUK9529-100B,127
    BUK9529-100B,127
    Tin
    Through Hole
    TO-220-3
    NO
    3
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    LOGIC LEVEL COMPATIBLE
    8541.29.00.75
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    157W Tc
    Single
    ENHANCEMENT MODE
    157W
    DRAIN
    30 ns
    N-Channel
    SWITCHING
    27m Ω @ 25A, 10V
    2V @ 1mA
    4360pF @ 25V
    46A Tc
    33nC @ 5V
    86ns
    4.5V 10V
    ±15V
    46 ns
    96 ns
    46A
    TO-220AB
    15V
    100V
    100V
    186A
    152 mJ
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK9240-100A/C1,11
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    114W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    38.6m Ω @ 25A, 10V
    2V @ 1mA
    3072pF @ 25V
    33A Tc
    -
    -
    4.5V 10V
    ±10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    2010
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK9509-75A,127
    -
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    8541.29.00.75
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    230W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    8.5m Ω @ 25A, 10V
    2V @ 1mA
    8840pF @ 25V
    75A Tj
    -
    -
    4.5V 10V
    ±10V
    -
    -
    -
    TO-220AB
    -
    -
    -
    440A
    562 mJ
    -
    ROHS3 Compliant
    2008
    75V
    Matte Tin (Sn)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    75A
    0.00995Ohm
    75V
    -
  • BUK9520-100A,127
    -
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    8541.29.00.75
    FET General Purpose Power
    MOSFET (Metal Oxide)
    3
    1
    200W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    19m Ω @ 25A, 10V
    2V @ 1mA
    6385pF @ 25V
    63A Tc
    -
    -
    4.5V 10V
    ±10V
    -
    -
    -
    TO-220AB
    -
    -
    -
    253A
    420 mJ
    -
    -
    -
    100V
    Tin (Sn)
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    63A
    0.022Ohm
    100V
    compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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