Nexperia USA Inc. BUK9529-100B,127
- Part Number:
- BUK9529-100B,127
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2489934-BUK9529-100B,127
- Description:
- MOSFET N-CH 100V 46A TO220AB
- Datasheet:
- BUK9529-100B
Nexperia USA Inc. BUK9529-100B,127 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9529-100B,127.
- Contact PlatingTin
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesTrenchMOS™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max157W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation157W
- Case ConnectionDRAIN
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs27m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds4360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C46A Tc
- Gate Charge (Qg) (Max) @ Vgs33nC @ 5V
- Rise Time86ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±15V
- Fall Time (Typ)46 ns
- Turn-Off Delay Time96 ns
- Continuous Drain Current (ID)46A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)15V
- Max Dual Supply Voltage100V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)186A
- Avalanche Energy Rating (Eas)152 mJ
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
BUK9529-100B,127 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 152 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 46A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 96 ns.Peak drain current for this device is 186A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
BUK9529-100B,127 Features
the avalanche energy rating (Eas) is 152 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 186A.
BUK9529-100B,127 Applications
There are a lot of Nexperia USA Inc.
BUK9529-100B,127 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 152 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 46A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 96 ns.Peak drain current for this device is 186A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
BUK9529-100B,127 Features
the avalanche energy rating (Eas) is 152 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 186A.
BUK9529-100B,127 Applications
There are a lot of Nexperia USA Inc.
BUK9529-100B,127 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
BUK9529-100B,127 More Descriptions
Trans MOSFET N-CH 100V 46A Automotive 3-Pin(3 Tab) TO-220AB Rail
N-channel TrenchMOS logic level FET
STANDARD MARKING * HORIZONTAL, RAIL PACK
N-channel TrenchMOS logic level FET
STANDARD MARKING * HORIZONTAL, RAIL PACK
The three parts on the right have similar specifications to BUK9529-100B,127.
-
ImagePart NumberManufacturerContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeSubcategoryTechnologyPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusPublishedDrain to Source Voltage (Vdss)Terminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinReach Compliance CodeView Compare
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BUK9529-100B,127TinThrough HoleTO-220-3NO3SILICON-55°C~175°C TJTubeTrenchMOS™e3Obsolete1 (Unlimited)3EAR99LOGIC LEVEL COMPATIBLE8541.29.00.75FET General Purpose PowerMOSFET (Metal Oxide)31157W TcSingleENHANCEMENT MODE157WDRAIN30 nsN-ChannelSWITCHING27m Ω @ 25A, 10V2V @ 1mA4360pF @ 25V46A Tc33nC @ 5V86ns4.5V 10V±15V46 ns96 ns46ATO-220AB15V100V100V186A152 mJNoRoHS Compliant--------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)TrenchMOS™-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--114W Tc-----N-Channel-38.6m Ω @ 25A, 10V2V @ 1mA3072pF @ 25V33A Tc--4.5V 10V±10V----------Non-RoHS Compliant2010100V-----------
-
-Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™e3Obsolete1 (Unlimited)3EAR99-8541.29.00.75FET General Purpose PowerMOSFET (Metal Oxide)31230W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING8.5m Ω @ 25A, 10V2V @ 1mA8840pF @ 25V75A Tj--4.5V 10V±10V---TO-220AB---440A562 mJ-ROHS3 Compliant200875VMatte Tin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE75A0.00995Ohm75V-
-
-Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™e3Obsolete1 (Unlimited)3EAR99-8541.29.00.75FET General Purpose PowerMOSFET (Metal Oxide)31200W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING19m Ω @ 25A, 10V2V @ 1mA6385pF @ 25V63A Tc--4.5V 10V±10V---TO-220AB---253A420 mJ---100VTin (Sn)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedSINGLE WITH BUILT-IN DIODE63A0.022Ohm100Vcompliant
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