NXP USA Inc. BUK951R8-40EQ

Name: BUK951R8-40EQ
Brand: NXP USA Inc.
SKU: 3586822-BUK951R8-40EQ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK951R8-40EQ

Manufacturer:: NXP USA Inc.

Ventron No:: 3586822-BUK951R8-40EQ

Description:: MOSFET N-CH 40V TO-220AB

ECAD Model:

Datasheet:: BUK951R8-40EQ

Specifications

NXP USA Inc. BUK951R8-40EQ technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BUK951R8-40EQ.

Mounting Type
Through Hole
Package / Case
TO-220-3
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40V
RoHS Status
ROHS3 Compliant

Description

BUK951R8-40EQ Overview
To operate this transistor, you will need a 40V drain to source voltage (Vdss).

BUK951R8-40EQ Features
a 40V drain to source voltage (Vdss)

BUK951R8-40EQ Applications
There are a lot of NXP USA Inc.
BUK951R8-40EQ applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

BUK951R8-40EQ More Descriptions

Compliant Through Hole TO-220-3 Obsolete (Last Updated: 1 day ago) 40 V
MOSFET N-CH 40V TO-220AB
IC MPU SUPERVISORY 4.63V SOT23

Product Comparison

The three parts on the right have similar specifications to BUK951R8-40EQ.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

FET Type

Drain to Source Voltage (Vdss)

RoHS Status

Surface Mount

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Reach Compliance Code

Additional Feature

View Compare
BUK951R8-40EQ

NXP USA Inc.

Through Hole

TO-220-3

Tube

Active

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

40V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9509-75A,127

NXP USA Inc.

Through Hole

TO-220-3

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

75V

ROHS3 Compliant

NO

SILICON

-55°C~175°C TJ

TrenchMOS™

2008

e3

3

EAR99

Matte Tin (Sn)

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

230W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

8.5m Ω @ 25A, 10V

2V @ 1mA

8840pF @ 25V

75A Tj

4.5V 10V

±10V

TO-220AB

75A

0.00995Ohm

440A

75V

562 mJ

-

-

BUK951R8-40EQ vs BUK9509-75A,127
BUK9520-100A,127

Nexperia USA Inc.

Through Hole

TO-220-3

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

100V

-

NO

SILICON

-55°C~175°C TJ

TrenchMOS™

-

e3

3

EAR99

Tin (Sn)

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

200W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

19m Ω @ 25A, 10V

2V @ 1mA

6385pF @ 25V

63A Tc

4.5V 10V

±10V

TO-220AB

63A

0.022Ohm

253A

100V

420 mJ

compliant

-

BUK951R8-40EQ vs BUK9520-100A,127
BUK9520-55A,127

NXP USA Inc.

Through Hole

TO-220-3

Tube

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

N-Channel

55V

ROHS3 Compliant

NO

SILICON

-55°C~175°C TJ

TrenchMOS™

2010

e3

3

EAR99

Matte Tin (Sn)

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

118W Tc

ENHANCEMENT MODE

DRAIN

SWITCHING

18m Ω @ 25A, 10V

2V @ 1mA

2210pF @ 25V

54A Tc

4.5V 10V

±10V

TO-220AB

54A

0.021Ohm

217A

55V

115 mJ

-

LOGIC LEVEL COMPATIBLE

BUK951R8-40EQ vs BUK9520-55A,127