Nexperia USA Inc. BUK9275-100A,118

Name: BUK9275-100A,118
Brand: Nexperia USA Inc.
SKU: 2848655-BUK9275-100A,118
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK9275-100A,118

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2848655-BUK9275-100A,118

Description:: MOSFET N-CH 100V 21.7A DPAK

ECAD Model:

Datasheet:: BUK9275-100A,118

Specifications

Nexperia USA Inc. BUK9275-100A,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9275-100A,118.

Factory Lead Time
26 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
88W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
88W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
72m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C
21.7A Tc
Rise Time
120ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±10V
Fall Time (Typ)
57 ns
Turn-Off Delay Time
58 ns
Continuous Drain Current (ID)
21.7A
Gate to Source Voltage (Vgs)
10V
Max Dual Supply Voltage
100V
Drain-source On Resistance-Max
0.084Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
87A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUK9275-100A,118 Overview
A device's maximal input capacitance is 1690pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 21.7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 58 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 87A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.By using 100V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

BUK9275-100A,118 Features
a continuous drain current (ID) of 21.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 87A.

BUK9275-100A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9275-100A,118 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

BUK9275-100A,118 More Descriptions

Trans MOSFET N-CH 100V 21.7A 3-Pin(2 Tab) DPAK T/R
BUK9275-100A - N-channel TrenchMOS logic level FET
N-channel TrenchMOS logic leve

Product Comparison

The three parts on the right have similar specifications to BUK9275-100A,118.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

JEDEC-95 Code

View Compare
BUK9275-100A,118

Nexperia USA Inc.

26 Weeks

Tin

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

e3

Active

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

3

R-PSSO-G2

1

88W Tc

Single

ENHANCEMENT MODE

88W

DRAIN

13 ns

N-Channel

SWITCHING

72m Ω @ 10A, 10V

2V @ 1mA

1690pF @ 25V

21.7A Tc

120ns

4.5V 10V

±10V

57 ns

58 ns

21.7A

10V

100V

0.084Ohm

100V

87A

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK9610-55A,118

NXP USA Inc.

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

TrenchMOS™

2001

e3

Obsolete

1 (Unlimited)

2

EAR99

MOSFET (Metal Oxide)

GULL WING

3

R-PSSO-G2

1

200W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

9m Ω @ 25A, 10V

2V @ 1mA

4307pF @ 25V

75A Tc

-

4.5V 10V

±15V

-

-

-

-

-

0.011Ohm

-

400A

-

ROHS3 Compliant

-

Tin (Sn)

8541.29.00.75

FET General Purpose Power

SINGLE

260

not_compliant

40

Not Qualified

SINGLE WITH BUILT-IN DIODE

68nC @ 5V

55V

100A

55V

333 mJ

-

-

BUK9275-100A,118 vs BUK9610-55A,118
BUK9515-60E,127

NXP USA Inc.

-

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

-

Obsolete

3 (168 Hours)

-

-

MOSFET (Metal Oxide)

-

-

-

-

96W Tc

-

-

-

-

-

N-Channel

-

13mOhm @ 15A, 10V

2.1V @ 1mA

2.651pF @ 25V

54A Tc

-

5V 10V

±10V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

20.5nC @ 5V

60V

-

-

-

TO-220AB

-

BUK9275-100A,118 vs BUK9515-60E,127
BUK9575-100A,127

Nexperia USA Inc.

-

-

Through Hole

TO-220-3

NO

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

3

R-PSFM-T3

1

99W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

72m Ω @ 10A, 10V

2V @ 1mA

1704pF @ 25V

23A Tc

-

4.5V 10V

±15V

-

-

-

-

-

0.084Ohm

-

91A

-

-

-

Tin (Sn)

8541.29.00.75

FET General Purpose Power

SINGLE

NOT SPECIFIED

compliant

NOT SPECIFIED

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

100V

23A

100V

100 mJ

-

TO-220AB

BUK9275-100A,118 vs BUK9575-100A,127