Nexperia USA Inc. BUK9240-100A,118
- Part Number:
- BUK9240-100A,118
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2851239-BUK9240-100A,118
- Description:
- MOSFET N-CH 100V 33A DPAK
- Datasheet:
- BUK9240-100A,118
Nexperia USA Inc. BUK9240-100A,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9240-100A,118.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max114W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation114W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs38.6m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3072pF @ 25V
- Current - Continuous Drain (Id) @ 25°C33A Tc
- Rise Time135ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±10V
- Fall Time (Typ)90 ns
- Turn-Off Delay Time125 ns
- Continuous Drain Current (ID)33A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)10V
- Max Dual Supply Voltage100V
- Drain-source On Resistance-Max0.0446Ohm
- Drain to Source Breakdown Voltage100V
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUK9240-100A,118 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3072pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 33A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 125 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Powered by 100V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
BUK9240-100A,118 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 125 ns
BUK9240-100A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9240-100A,118 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3072pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 33A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 125 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Powered by 100V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
BUK9240-100A,118 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 125 ns
BUK9240-100A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9240-100A,118 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
BUK9240-100A,118 More Descriptions
BUK9240 Series 100 V 38.6 mOhm N-Channel TrenchMOS Logic Level FET - TO-252
Power Field-Effect Transistor, 33A I(D), 100V, 0.0446ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:33A; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):33mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
MOSFET, N CH 100V 33A SOT428; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0386ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 114W; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 33A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 100V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 10V
Power Field-Effect Transistor, 33A I(D), 100V, 0.0446ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:33A; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):33mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
MOSFET, N CH 100V 33A SOT428; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0386ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 114W; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 33A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 100V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to BUK9240-100A,118.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal FormPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxDrain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Terminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Reach Compliance CodeView Compare
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BUK9240-100A,11826 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES34.535924gSILICON-55°C~175°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010e3Active1 (Unlimited)2EAR99MOSFET (Metal Oxide)GULL WING3R-PSSO-G21114W TcSingleENHANCEMENT MODE114WDRAIN20 nsN-ChannelSWITCHING38.6m Ω @ 25A, 10V2V @ 1mA3072pF @ 25V33A Tc135ns4.5V 10V±10V90 ns125 ns33ATO-252AA10V100V0.0446Ohm100V6.35mm6.35mm6.35mmNoROHS3 CompliantLead Free---------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-----55°C~175°C TJTape & Reel (TR)TrenchMOS™2010-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)----114W Tc-----N-Channel-38.6m Ω @ 25A, 10V2V @ 1mA3072pF @ 25V33A Tc-4.5V 10V±10V------------Non-RoHS Compliant-100V-------------
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--Through HoleTO-220-3NO--SILICON-55°C~175°C TJTubeTrenchMOS™2008e3Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)-3R-PSFM-T31230W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING8.5m Ω @ 25A, 10V2V @ 1mA8840pF @ 25V75A Tj-4.5V 10V±10V---TO-220AB--0.00995Ohm-----ROHS3 Compliant-75VMatte Tin (Sn)8541.29.00.75FET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE WITH BUILT-IN DIODE75A440A75V562 mJ-
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--Through HoleTO-220-3NO--SILICON-55°C~175°C TJTubeTrenchMOS™-e3Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)-3R-PSFM-T31200W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING19m Ω @ 25A, 10V2V @ 1mA6385pF @ 25V63A Tc-4.5V 10V±10V---TO-220AB--0.022Ohm-------100VTin (Sn)8541.29.00.75FET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE WITH BUILT-IN DIODE63A253A100V420 mJcompliant
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