BUK9240-100A,118

Nexperia USA Inc. BUK9240-100A,118

Part Number:
BUK9240-100A,118
Manufacturer:
Nexperia USA Inc.
Ventron No:
2851239-BUK9240-100A,118
Description:
MOSFET N-CH 100V 33A DPAK
ECAD Model:
Datasheet:
BUK9240-100A,118

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Specifications
Nexperia USA Inc. BUK9240-100A,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK9240-100A,118.
  • Factory Lead Time
    26 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchMOS™
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    114W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    114W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    38.6m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    3072pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    33A Tc
  • Rise Time
    135ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    125 ns
  • Continuous Drain Current (ID)
    33A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    10V
  • Max Dual Supply Voltage
    100V
  • Drain-source On Resistance-Max
    0.0446Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    6.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUK9240-100A,118 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3072pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 33A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 125 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.Powered by 100V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

BUK9240-100A,118 Features
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 125 ns


BUK9240-100A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9240-100A,118 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
BUK9240-100A,118 More Descriptions
BUK9240 Series 100 V 38.6 mOhm N-Channel TrenchMOS Logic Level FET - TO-252
Power Field-Effect Transistor, 33A I(D), 100V, 0.0446ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:33A; Drain Source Voltage, Vds:100V; On Resistance, Rds(on):33mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes
MOSFET, N CH 100V 33A SOT428; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0386ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 114W; Transistor Case Style: SOT-428; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 33A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 100V; Voltage Vgs Max: 10V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to BUK9240-100A,118.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Reach Compliance Code
    View Compare
  • BUK9240-100A,118
    BUK9240-100A,118
    26 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    4.535924g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchMOS™
    2010
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    MOSFET (Metal Oxide)
    GULL WING
    3
    R-PSSO-G2
    1
    114W Tc
    Single
    ENHANCEMENT MODE
    114W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    38.6m Ω @ 25A, 10V
    2V @ 1mA
    3072pF @ 25V
    33A Tc
    135ns
    4.5V 10V
    ±10V
    90 ns
    125 ns
    33A
    TO-252AA
    10V
    100V
    0.0446Ohm
    100V
    6.35mm
    6.35mm
    6.35mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK9240-100A/C1,11
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    TrenchMOS™
    2010
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    114W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    38.6m Ω @ 25A, 10V
    2V @ 1mA
    3072pF @ 25V
    33A Tc
    -
    4.5V 10V
    ±10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK9509-75A,127
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    2008
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    3
    R-PSFM-T3
    1
    230W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    8.5m Ω @ 25A, 10V
    2V @ 1mA
    8840pF @ 25V
    75A Tj
    -
    4.5V 10V
    ±10V
    -
    -
    -
    TO-220AB
    -
    -
    0.00995Ohm
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    75V
    Matte Tin (Sn)
    8541.29.00.75
    FET General Purpose Power
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    75A
    440A
    75V
    562 mJ
    -
  • BUK9520-100A,127
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    -
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    3
    R-PSFM-T3
    1
    200W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    19m Ω @ 25A, 10V
    2V @ 1mA
    6385pF @ 25V
    63A Tc
    -
    4.5V 10V
    ±10V
    -
    -
    -
    TO-220AB
    -
    -
    0.022Ohm
    -
    -
    -
    -
    -
    -
    -
    100V
    Tin (Sn)
    8541.29.00.75
    FET General Purpose Power
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    63A
    253A
    100V
    420 mJ
    compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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