Nexperia USA Inc. BUK7Y4R8-60EX

Name: BUK7Y4R8-60EX
Brand: Nexperia USA Inc.
SKU: 2848957-BUK7Y4R8-60EX
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK7Y4R8-60EX

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2848957-BUK7Y4R8-60EX

Description:: MOSFET N-CH 60V 100A LFPAK

ECAD Model:

Datasheet:: BUK7Y4R8-60EX

Specifications

Nexperia USA Inc. BUK7Y4R8-60EX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7Y4R8-60EX.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchMOS™
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Additional Feature
AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
238W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
238W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
5520pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
73.1nC @ 10V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
31 ns
Turn-Off Delay Time
57 ns
Continuous Drain Current (ID)
100A
JEDEC-95 Code
MO-235
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
595A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BUK7Y4R8-60EX Description
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

BUK7Y4R8-60EX Features
Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

BUK7Y4R8-60EX Applications
12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

BUK7Y4R8-60EX More Descriptions

BUK7Y4R8-60E - N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Mosfet, Aec-Q101, N-Ch, 60V, 100A/Lfpak56 Rohs Compliant: Yes |Nexperia BUK7Y4R8-60EX
Trans MOSFET N-CH 60V 100A Automotive 5-Pin(4 Tab) LFPAK T/R

Product Comparison

The three parts on the right have similar specifications to BUK7Y4R8-60EX.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Contact Plating

JESD-609 Code

ECCN Code

Subcategory

JESD-30 Code

Element Configuration

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

FET Feature

Radiation Hardening

View Compare
BUK7Y4R8-60EX

Nexperia USA Inc.

12 Weeks

Surface Mount

SC-100, SOT-669

YES

4

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

TrenchMOS™

2013

Active

1 (Unlimited)

4

AVALANCHE RATED

MOSFET (Metal Oxide)

SINGLE

GULL WING

4

1

SINGLE WITH BUILT-IN DIODE

1

238W Tc

ENHANCEMENT MODE

238W

DRAIN

15 ns

N-Channel

SWITCHING

4.8m Ω @ 25A, 10V

4V @ 1mA

5520pF @ 25V

100A Tc

73.1nC @ 10V

27ns

10V

±20V

31 ns

57 ns

100A

MO-235

20V

60V

60V

595A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK7575-55A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

62W Tc

-

-

-

-

N-Channel

-

75mOhm @ 10A, 10V

4V @ 1mA

483pF @ 25V

20.3A Tc

-

-

10V

±20V

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220AB

55V

-

-

-

-

-

-

-

-

-

-

BUK7Y4R8-60EX vs BUK7575-55A,127
BUK7107-40ATC,118

Nexperia USA Inc.

-

Surface Mount

TO-263-5, D2Pak (4 Leads Tab), TO-263BB

YES

5

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2008

Obsolete

1 (Unlimited)

4

-

MOSFET (Metal Oxide)

-

GULL WING

5

1

-

-

272W Tc

ENHANCEMENT MODE

272W

DRAIN

2 μs

N-Channel

SWITCHING

7m Ω @ 50A, 10V

4V @ 1mA

4500pF @ 25V

75A Tc

108nC @ 10V

5.7μs

10V

±20V

6.8 μs

8.9 μs

140A

-

20V

40V

40V

-

RoHS Compliant

-

-

-

Tin

e3

EAR99

FET General Purpose Power

R-PSSO-G4

Single

0.007Ohm

1400 mJ

Temperature Sensing Diode

No

BUK7Y4R8-60EX vs BUK7107-40ATC,118
BUK7508-55A,127

Nexperia USA Inc.

-

Through Hole

TO-220-3

-

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

254W Tc

-

-

-

-

N-Channel

-

8mOhm @ 25A, 10V

4V @ 1mA

4.352pF @ 25V

75A Tc

-

-

10V

±20V

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

TO-220AB

55V

-

-

-

-

-

-

-

-

-

-

BUK7Y4R8-60EX vs BUK7508-55A,127