Nexperia USA Inc. BUK7M19-60EX

Name: BUK7M19-60EX
Brand: Nexperia USA Inc.
SKU: 3554246-BUK7M19-60EX
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK7M19-60EX

Manufacturer:: Nexperia USA Inc.

Ventron No:: 3554246-BUK7M19-60EX

Description:: MOSFET N-CH 60V MLFPAK

ECAD Model:

Datasheet:: BUK7M19-60EX

Specifications

Nexperia USA Inc. BUK7M19-60EX technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7M19-60EX.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-1210, 8-LFPAK33
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
55W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
19m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C
35.8A Tc
Gate Charge (Qg) (Max) @ Vgs
17.3nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
35.8A
Drain Current-Max (Abs) (ID)
36A
Drain-source On Resistance-Max
0.019Ohm
Pulsed Drain Current-Max (IDM)
143A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
21.1 mJ
RoHS Status
ROHS3 Compliant

Description

BUK7M19-60EX Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 21.1 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1055pF @ 25V.This device has a continuous drain current (ID) of [35.8A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 36A.A maximum pulsed drain current of 143A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BUK7M19-60EX Features
the avalanche energy rating (Eas) is 21.1 mJ
a continuous drain current (ID) of 35.8A
based on its rated peak drain current 143A.
a 60V drain to source voltage (Vdss)

BUK7M19-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M19-60EX applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BUK7M19-60EX More Descriptions

BUK7M19-60E - N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33
Trans MOSFET N-CH 60V 36A Automotive 8-Pin LFPAK EP T/R
60V 35.8A 55W 19m´Î@10V10A 4V@1mA N Channel SOT-1210 MOSFETs ROHS
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Nexperia BUK7M19-60EX
Bipolar Transistors - BJT NPN Epitaxial Transistor
ELITE PROGRAM PART - BUK7M19-60E/SOT1210/mLFPAK
MOSFET BUK7M19-60E/MLFPAK/REEL 7" Q1/

Product Comparison

The three parts on the right have similar specifications to BUK7M19-60EX.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Reference Standard

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Contact Plating

Surface Mount

Number of Pins

JESD-609 Code

ECCN Code

HTS Code

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Radiation Hardening

Supplier Device Package

View Compare
BUK7M19-60EX

Nexperia USA Inc.

26 Weeks

Surface Mount

Surface Mount

SOT-1210, 8-LFPAK33

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2016

Active

1 (Unlimited)

4

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

8

AEC-Q101; IEC-60134

R-PSSO-G4

1

SINGLE WITH BUILT-IN DIODE

55W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

19m Ω @ 10A, 10V

4V @ 1mA

1055pF @ 25V

35.8A Tc

17.3nC @ 10V

60V

10V

±20V

35.8A

36A

0.019Ohm

143A

60V

21.1 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK7535-100A,127

Nexperia USA Inc.

-

-

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

-

-

-

-

3

-

-

1

-

149W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

35m Ω @ 25A, 10V

4V @ 1mA

2535pF @ 25V

41A Tc

-

-

10V

±20V

41A

-

-

165A

-

110 mJ

RoHS Compliant

Tin

NO

3

e3

EAR99

8541.29.00.75

FET General Purpose Power

Single

149W

15 ns

67ns

35 ns

56 ns

TO-220AB

20V

100V

100V

No

-

BUK7M19-60EX vs BUK7535-100A,127
BUK7226-75A/C1,118

NXP USA Inc.

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

TrenchMOS™

2008

Active

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

158W Tc

-

-

N-Channel

-

26mOhm @ 25A, 10V

4V @ 1mA

2385pF @ 25V

45A Tc

48nC @ 10V

75V

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

DPAK

BUK7M19-60EX vs BUK7226-75A/C1,118
BUK7516-55A,127

Nexperia USA Inc.

-

Surface Mount

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

Obsolete

1 (Unlimited)

3

MOSFET (Metal Oxide)

-

-

-

-

3

-

-

1

-

138W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 25A, 10V

4V @ 1mA

2245pF @ 25V

65.7A Tc

-

-

10V

±20V

3.8A

65.7A

0.016Ohm

-

-

120 mJ

RoHS Compliant

Tin

-

3

e3

EAR99

8541.29.00.75

FET General Purpose Power

Single

138W

16 ns

70ns

41 ns

57 ns

TO-220AB

20V

55V

55V

No

-

BUK7M19-60EX vs BUK7516-55A,127