NXP USA Inc. BUK75150-55A,127

Name: BUK75150-55A,127
Brand: NXP USA Inc.
SKU: 3586664-BUK75150-55A,127
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BUK75150-55A,127

Manufacturer:: NXP USA Inc.

Ventron No:: 3586664-BUK75150-55A,127

Description:: MOSFET N-CH 55V 11A TO220AB

ECAD Model:

Datasheet:: BUK75150(76150)-55A

Specifications

NXP USA Inc. BUK75150-55A,127 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BUK75150-55A,127.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
TrenchMOS™
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
36W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
322pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
5.5nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-220AB
Drain Current-Max (Abs) (ID)
11A
Drain-source On Resistance-Max
0.15Ohm
Pulsed Drain Current-Max (IDM)
44A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
16 mJ
RoHS Status
ROHS3 Compliant

Description

BUK75150-55A,127 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 16 mJ.The maximum input capacitance of this device is 322pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 11A.There is no pulsed drain current maximum for this device based on its rated peak drain current 44A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

BUK75150-55A,127 Features
the avalanche energy rating (Eas) is 16 mJ
based on its rated peak drain current 44A.
a 55V drain to source voltage (Vdss)

BUK75150-55A,127 Applications
There are a lot of NXP USA Inc.
BUK75150-55A,127 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

BUK75150-55A,127 More Descriptions

Compliant Through Hole 10 ns 26 ns 150 mΩ TO-220AB 3 Obsolete (Last Updated: 1 day ago)
TRIAC SENS GATE 800V 15A TO220AB
French Electronic Distributor since 1988
N-channel TrenchMOS standard level FET

Product Comparison

The three parts on the right have similar specifications to BUK75150-55A,127.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Contact Plating

Mount

Number of Pins

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain to Source Breakdown Voltage

Radiation Hardening

Additional Feature

Reach Compliance Code

View Compare
BUK75150-55A,127

NXP USA Inc.

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

1997

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

8541.29.00.75

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

36W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

150m Ω @ 5A, 10V

4V @ 1mA

322pF @ 25V

11A Tc

5.5nC @ 10V

55V

10V

±20V

TO-220AB

11A

0.15Ohm

44A

55V

16 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BUK7508-55A,127

Nexperia USA Inc.

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

TrenchMOS™

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

254W Tc

-

-

N-Channel

-

8mOhm @ 25A, 10V

4V @ 1mA

4.352pF @ 25V

75A Tc

-

55V

10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

TO-220AB

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BUK75150-55A,127 vs BUK7508-55A,127
BUK7516-55A,127

Nexperia USA Inc.

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

-

e3

Obsolete

1 (Unlimited)

3

EAR99

-

8541.29.00.75

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

3

-

-

1

-

138W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

16m Ω @ 25A, 10V

4V @ 1mA

2245pF @ 25V

65.7A Tc

-

-

10V

±20V

TO-220AB

65.7A

0.016Ohm

-

-

120 mJ

RoHS Compliant

-

Tin

Surface Mount

3

Single

138W

16 ns

70ns

41 ns

57 ns

3.8A

20V

55V

55V

No

-

-

BUK75150-55A,127 vs BUK7516-55A,127
BUK7535-55A,127

Nexperia USA Inc.

Through Hole

TO-220-3

NO

SILICON

-55°C~175°C TJ

Tube

TrenchMOS™

2011

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

8541.29.00.75

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

3

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

85W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

35m Ω @ 20A, 10V

4V @ 1mA

872pF @ 25V

35A Tc

-

55V

10V

±20V

TO-220AB

35A

0.035Ohm

139A

55V

49 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ESD PROTECTED

compliant

BUK75150-55A,127 vs BUK7535-55A,127