BUK7208-40B,118

Nexperia USA Inc. BUK7208-40B,118

Part Number:
BUK7208-40B,118
Manufacturer:
Nexperia USA Inc.
Ventron No:
2478828-BUK7208-40B,118
Description:
MOSFET N-CH 40V 75A DPAK
ECAD Model:
Datasheet:
BUK7208-40B,118

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Specifications
Nexperia USA Inc. BUK7208-40B,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7208-40B,118.
  • Factory Lead Time
    26 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~185°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchMOS™
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    167W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    167W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2493pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Rise Time
    104ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    51 ns
  • Turn-Off Delay Time
    47 ns
  • Continuous Drain Current (ID)
    105A
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    40V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain-source On Resistance-Max
    0.008Ohm
  • Drain to Source Breakdown Voltage
    40V
  • Avalanche Energy Rating (Eas)
    240 mJ
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BUK7208-40B,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 240 mJ.A device's maximum input capacitance is 2493pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 105A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 47 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

BUK7208-40B,118 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 105A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 47 ns


BUK7208-40B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7208-40B,118 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
BUK7208-40B,118 More Descriptions
Trans MOSFET N-CH 40V 105A Automotive 3-Pin(2 Tab) DPAK T/R
NEXPERIA - BUK7208-40B,118 - MOSFET, N-CH, 40V, 75A, TO-252
BUK7208-40B - N-channel TrenchMOS standard level FET
Mosfet, N-Ch, 40V, 75A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Nexperia BUK7208-40B,118
Product Comparison
The three parts on the right have similar specifications to BUK7208-40B,118.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Mount
    Additional Feature
    Reach Compliance Code
    View Compare
  • BUK7208-40B,118
    BUK7208-40B,118
    26 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~185°C TJ
    Tape & Reel (TR)
    Automotive, AEC-Q101, TrenchMOS™
    2010
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    MOSFET (Metal Oxide)
    GULL WING
    3
    R-PSSO-G2
    1
    167W Tc
    Single
    ENHANCEMENT MODE
    167W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    8m Ω @ 25A, 10V
    4V @ 1mA
    2493pF @ 25V
    75A Tc
    35nC @ 10V
    104ns
    10V
    ±20V
    51 ns
    47 ns
    105A
    TO-252AA
    20V
    40V
    75A
    0.008Ohm
    40V
    240 mJ
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BUK7540-100A,127
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    1999
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    3
    R-PSFM-T3
    1
    138W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    40m Ω @ 40A, 10V
    4V @ 1mA
    2293pF @ 25V
    37A Tc
    -
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    -
    37A
    0.04Ohm
    -
    31 mJ
    -
    ROHS3 Compliant
    -
    Tin (Sn)
    8541.29.00.75
    FET General Purpose Power
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    100V
    149A
    100V
    -
    -
    -
  • BUK7516-55A,127
    -
    Tin
    Through Hole
    TO-220-3
    -
    3
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    -
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    3
    -
    1
    138W Tc
    Single
    ENHANCEMENT MODE
    138W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    16m Ω @ 25A, 10V
    4V @ 1mA
    2245pF @ 25V
    65.7A Tc
    -
    70ns
    10V
    ±20V
    41 ns
    57 ns
    3.8A
    TO-220AB
    20V
    55V
    65.7A
    0.016Ohm
    55V
    120 mJ
    No
    RoHS Compliant
    -
    -
    8541.29.00.75
    FET General Purpose Power
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    -
    -
  • BUK7535-55A,127
    -
    -
    Through Hole
    TO-220-3
    NO
    -
    SILICON
    -55°C~175°C TJ
    Tube
    TrenchMOS™
    2011
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MOSFET (Metal Oxide)
    -
    3
    R-PSFM-T3
    1
    85W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    35m Ω @ 20A, 10V
    4V @ 1mA
    872pF @ 25V
    35A Tc
    -
    -
    10V
    ±20V
    -
    -
    -
    TO-220AB
    -
    -
    35A
    0.035Ohm
    -
    49 mJ
    -
    -
    -
    Tin (Sn)
    8541.29.00.75
    FET General Purpose Power
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    55V
    139A
    55V
    -
    ESD PROTECTED
    compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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