Nexperia USA Inc. BUK7208-40B,118
- Part Number:
- BUK7208-40B,118
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2478828-BUK7208-40B,118
- Description:
- MOSFET N-CH 40V 75A DPAK
- Datasheet:
- BUK7208-40B,118
Nexperia USA Inc. BUK7208-40B,118 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BUK7208-40B,118.
- Factory Lead Time26 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~185°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2010
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max167W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation167W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2493pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Rise Time104ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)51 ns
- Turn-Off Delay Time47 ns
- Continuous Drain Current (ID)105A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage40V
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.008Ohm
- Drain to Source Breakdown Voltage40V
- Avalanche Energy Rating (Eas)240 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BUK7208-40B,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 240 mJ.A device's maximum input capacitance is 2493pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 105A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 47 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7208-40B,118 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 105A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 47 ns
BUK7208-40B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7208-40B,118 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 240 mJ.A device's maximum input capacitance is 2493pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 105A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 47 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 40V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7208-40B,118 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 105A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 47 ns
BUK7208-40B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7208-40B,118 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
BUK7208-40B,118 More Descriptions
Trans MOSFET N-CH 40V 105A Automotive 3-Pin(2 Tab) DPAK T/R
NEXPERIA - BUK7208-40B,118 - MOSFET, N-CH, 40V, 75A, TO-252
BUK7208-40B - N-channel TrenchMOS standard level FET
Mosfet, N-Ch, 40V, 75A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Nexperia BUK7208-40B,118
NEXPERIA - BUK7208-40B,118 - MOSFET, N-CH, 40V, 75A, TO-252
BUK7208-40B - N-channel TrenchMOS standard level FET
Mosfet, N-Ch, 40V, 75A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0066Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Nexperia BUK7208-40B,118
The three parts on the right have similar specifications to BUK7208-40B,118.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal FormPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationDrain to Source Voltage (Vdss)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinMountAdditional FeatureReach Compliance CodeView Compare
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BUK7208-40B,11826 WeeksTinSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-55°C~185°C TJTape & Reel (TR)Automotive, AEC-Q101, TrenchMOS™2010e3Active1 (Unlimited)2EAR99MOSFET (Metal Oxide)GULL WING3R-PSSO-G21167W TcSingleENHANCEMENT MODE167WDRAIN16 nsN-ChannelSWITCHING8m Ω @ 25A, 10V4V @ 1mA2493pF @ 25V75A Tc35nC @ 10V104ns10V±20V51 ns47 ns105ATO-252AA20V40V75A0.008Ohm40V240 mJNoROHS3 CompliantLead Free---------------
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--Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™1999e3Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)-3R-PSFM-T31138W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING40m Ω @ 40A, 10V4V @ 1mA2293pF @ 25V37A Tc--10V±20V---TO-220AB--37A0.04Ohm-31 mJ-ROHS3 Compliant-Tin (Sn)8541.29.00.75FET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE WITH BUILT-IN DIODE100V149A100V---
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-TinThrough HoleTO-220-3-3SILICON-55°C~175°C TJTubeTrenchMOS™-e3Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)-3-1138W TcSingleENHANCEMENT MODE138WDRAIN16 nsN-ChannelSWITCHING16m Ω @ 25A, 10V4V @ 1mA2245pF @ 25V65.7A Tc-70ns10V±20V41 ns57 ns3.8ATO-220AB20V55V65.7A0.016Ohm55V120 mJNoRoHS Compliant--8541.29.00.75FET General Purpose Power--------Surface Mount--
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--Through HoleTO-220-3NO-SILICON-55°C~175°C TJTubeTrenchMOS™2011e3Obsolete1 (Unlimited)3EAR99MOSFET (Metal Oxide)-3R-PSFM-T3185W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING35m Ω @ 20A, 10V4V @ 1mA872pF @ 25V35A Tc--10V±20V---TO-220AB--35A0.035Ohm-49 mJ---Tin (Sn)8541.29.00.75FET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDNot QualifiedSINGLE WITH BUILT-IN DIODE55V139A55V-ESD PROTECTEDcompliant
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