Infineon Technologies BTS282Z E3180A
- Part Number:
- BTS282Z E3180A
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482882-BTS282Z E3180A
- Description:
- MOSFET N-CH 49V 80A TO-220-7
- Datasheet:
- BTS282Z
Infineon Technologies BTS282Z E3180A technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BTS282Z E3180A.
- Mounting TypeSurface Mount
- Package / CaseTO-263-8, D2Pak (7 Leads Tab), TO-263CA
- Supplier Device PackagePG-TO220-7-180
- Operating Temperature-40°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesTEMPFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max300W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6.5mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id2V @ 240μA
- Input Capacitance (Ciss) (Max) @ Vds4.8pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs232nC @ 10V
- Drain to Source Voltage (Vdss)49V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- FET FeatureTemperature Sensing Diode
- RoHS StatusNon-RoHS Compliant
BTS282Z E3180A Overview
The maximum input capacitance of this device is 4.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 49V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BTS282Z E3180A Features
a 49V drain to source voltage (Vdss)
BTS282Z E3180A Applications
There are a lot of Rochester Electronics, LLC
BTS282Z E3180A applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 4.8pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 49V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BTS282Z E3180A Features
a 49V drain to source voltage (Vdss)
BTS282Z E3180A Applications
There are a lot of Rochester Electronics, LLC
BTS282Z E3180A applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The three parts on the right have similar specifications to BTS282Z E3180A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)FET FeatureRoHS StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightPublishedMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingOutput VoltageNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxLead FreeNumber of ElementsView Compare
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BTS282Z E3180ASurface MountTO-263-8, D2Pak (7 Leads Tab), TO-263CAPG-TO220-7-180-40°C~175°C TJTape & Reel (TR)TEMPFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)300W TcN-Channel6.5mOhm @ 36A, 10V2V @ 240μA4.8pF @ 25V80A Tc232nC @ 10V49V4.5V 10V±20VTemperature Sensing DiodeNon-RoHS Compliant-----------------------------
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Surface MountTO-220-5PG-TO220-5-12-40°C~175°C TJTubeTEMPFET®Active1 (Unlimited)MOSFET (Metal Oxide)170W TcN-Channel13mOhm @ 19A, 10V2V @ 130μA2660pF @ 25V35A Tc130nC @ 10V55V4.5V 10V±20VTemperature Sensing DiodeROHS3 Compliant18 WeeksTinSurface Mount, Through Hole53.000003g2014175°C-40°C55V35A55V1Single170W15 nsHalogen Free70ns25 ns40 ns35A20V55V55V2.66nF13mOhm13 mΩContains Lead-
-
Surface MountTO-263-5, D2Pak (4 Leads Tab), TO-263BBPG-TO263-5-2-40°C~175°C TJTape & Reel (TR)TEMPFET®Active1 (Unlimited)MOSFET (Metal Oxide)120W TcN-Channel18mOhm @ 12A, 10V2V @ 90μA1730pF @ 25V33A Tc90nC @ 10V55V4.5V 10V±20VTemperature Sensing DiodeROHS3 Compliant18 WeeksTinSurface Mount51.59999g2014175°C-40°C---1Single120W15 nsHalogen Free30ns20 ns30 ns33A20V55V55V1.73nF18mOhm18 mΩContains Lead1
-
Through HoleTO-220-7P-TO220-7-3-40°C~175°C TJTubeTEMPFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)300W TcN-Channel6.5mOhm @ 36A, 10V2V @ 240μA4.8pF @ 25V80A Tc232nC @ 10V49V4.5V 10V±20VTemperature Sensing DiodeROHS3 Compliant----------------------------
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