Infineon Technologies BSZ160N10NS3GATMA1
- Part Number:
- BSZ160N10NS3GATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2478849-BSZ160N10NS3GATMA1
- Description:
- MOSFET N-CH 100V 40A TSDSON-8
- Datasheet:
- BSZ160N10NS3GATMA1
Infineon Technologies BSZ160N10NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ160N10NS3GATMA1.
- Factory Lead Time18 Weeks
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2011
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Reach Compliance Codenot_compliant
- Pin Count8
- JESD-30 CodeS-PDSO-N5
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.1W Ta 63W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs16m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id3.5V @ 12μA
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 50V
- Current - Continuous Drain (Id) @ 25°C8A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)40A
- Drain-source On Resistance-Max0.016Ohm
- Pulsed Drain Current-Max (IDM)160A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)80 mJ
- RoHS StatusROHS3 Compliant
BSZ160N10NS3GATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 80 mJ.A device's maximal input capacitance is 1700pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 40A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).
BSZ160N10NS3GATMA1 Features
the avalanche energy rating (Eas) is 80 mJ
based on its rated peak drain current 160A.
a 100V drain to source voltage (Vdss)
BSZ160N10NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSZ160N10NS3GATMA1 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 80 mJ.A device's maximal input capacitance is 1700pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 40A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).
BSZ160N10NS3GATMA1 Features
the avalanche energy rating (Eas) is 80 mJ
based on its rated peak drain current 160A.
a 100V drain to source voltage (Vdss)
BSZ160N10NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSZ160N10NS3GATMA1 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
BSZ160N10NS3GATMA1 More Descriptions
MOSFET, N-CH, 100V, 40A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drai
Single N-Channel 100 V 16 mOhm 19 nC OptiMOS Power Mosfet - TSDSON-8
Transistor MOSFET N-CH 100V 40A 8-Pin PG-TSDSON T/R
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TSDSON-8, RoHSInfineon SCT
MOSFET, N-CH, 100V, 40A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:63W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Single N-Channel 100 V 16 mOhm 19 nC OptiMOS Power Mosfet - TSDSON-8
Transistor MOSFET N-CH 100V 40A 8-Pin PG-TSDSON T/R
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TSDSON-8, RoHSInfineon SCT
MOSFET, N-CH, 100V, 40A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:63W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
The three parts on the right have similar specifications to BSZ160N10NS3GATMA1.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusNumber of TerminalsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Operating Temperature (Max)Polarity/Channel TypeFET TechnologyContact PlatingMountNumber of PinsHalogen FreeRise TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageREACH SVHCLead FreeNumber of ChannelsElement ConfigurationTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeView Compare
-
BSZ160N10NS3GATMA118 WeeksSurface Mount8-PowerTDFNYESSILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2011e3noActive1 (Unlimited)5EAR99Tin (Sn)8541.29.00.95MOSFET (Metal Oxide)DUALNO LEADnot_compliant8S-PDSO-N5Not Qualified1SINGLE WITH BUILT-IN DIODE2.1W Ta 63W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING16m Ω @ 20A, 10V3.5V @ 12μA1700pF @ 50V8A Ta 40A Tc25nC @ 10V100V6V 10V±20V40A0.016Ohm160A100V80 mJROHS3 Compliant------------------------
-
---YESSILICON----e3icon-pbfree no-1 (Unlimited)-EAR99Tin (Sn)--DUALNO LEADnot_compliant8S-PDSO-N5Not Qualified1SINGLE WITH BUILT-IN DIODE-ENHANCEMENT MODEDRAIN-SWITCHING--------10.9A0.165Ohm44A250V120 mJRoHS Compliant5NOT SPECIFIEDNOT SPECIFIED150°CN-CHANNELMETAL-OXIDE SEMICONDUCTOR-----------------
-
18 WeeksSurface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2013e3-Active1 (Unlimited)5EAR99--MOSFET (Metal Oxide)DUALNO LEADnot_compliant-S-PDSO-N5-1SINGLE WITH BUILT-IN DIODE2.1W Ta 63W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING15m Ω @ 20A, 10V2.1V @ 33μA2500pF @ 50V40A Tc35nC @ 10V-4.5V 10V±20V-0.02Ohm160A--ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIED---TinSurface Mount8Halogen Free4.6ns40A1.7V20V100V100VNo SVHCContains Lead-----
-
18 WeeksSurface Mount8-PowerTDFN-SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2013-yesActive1 (Unlimited)3EAR99--MOSFET (Metal Oxide)DUALNO LEADnot_compliant-S-PDSO-N3-1-50W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING11m Ω @ 20A, 10V3.8V @ 22μA1300pF @ 40V40A Tc18.5nC @ 10V-6V 10V±20V----40 mJROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIED----Surface Mount8Halogen Free3ns40A-20V80V80V-Contains Lead1Single9 ns3 ns15 ns
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 February 2024
SG3525AN Controller: Specifications, Application Circuit and Other Details
Ⅰ. Overview of SG3525ANⅡ. Specifications of SG3525ANⅢ. Application circuit of SG3525ANⅣ. How to evaluate the efficiency of SG3525AN controller?Ⅴ. Recommended operating conditions for SG3525ANⅥ. What are the advantages... -
19 February 2024
SS14 Schottky Power Diode Function, Applications, Working Principle and Features
Ⅰ. What is a Schottky diode?Ⅱ. SS14 overviewⅢ. Common brands of SS14 diodeⅣ. Typical performance characteristics of SS14 diodeⅤ. The function of SS14 diodeⅥ. What are the applications... -
20 February 2024
LM358DR2G Operational Amplifier Symbol, Features, Applications and More
Ⅰ. Introduction to LM358DR2GⅡ. Technical parameters of LM358DR2GⅢ. Features of LM358DR2GⅣ. Symbol, footprint and pin configuration of LM358DR2GⅤ. Where is LM358DR2G used?Ⅵ. Circuit description of LM358DR2GⅦ. The difference... -
20 February 2024
MB6S Rectifier Bridge Specifications, Working Principle and Features
Ⅰ. Overview of MB6SⅡ. Specifications of MB6SⅢ. Working principle of MB6SⅣ. Circuit schematic diagram of MB6SⅤ. What are the features of MB6S?Ⅵ. Absolute maximum ratings of MB6SⅦ. How...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.