BSZ160N10NS3GATMA1

Infineon Technologies BSZ160N10NS3GATMA1

Part Number:
BSZ160N10NS3GATMA1
Manufacturer:
Infineon Technologies
Ventron No:
2478849-BSZ160N10NS3GATMA1
Description:
MOSFET N-CH 100V 40A TSDSON-8
ECAD Model:
Datasheet:
BSZ160N10NS3GATMA1

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Specifications
Infineon Technologies BSZ160N10NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ160N10NS3GATMA1.
  • Factory Lead Time
    18 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Reach Compliance Code
    not_compliant
  • Pin Count
    8
  • JESD-30 Code
    S-PDSO-N5
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.1W Ta 63W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    16m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 12μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1700pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    8A Ta 40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    40A
  • Drain-source On Resistance-Max
    0.016Ohm
  • Pulsed Drain Current-Max (IDM)
    160A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    80 mJ
  • RoHS Status
    ROHS3 Compliant
Description
BSZ160N10NS3GATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 80 mJ.A device's maximal input capacitance is 1700pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 40A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (6V 10V).

BSZ160N10NS3GATMA1 Features
the avalanche energy rating (Eas) is 80 mJ
based on its rated peak drain current 160A.
a 100V drain to source voltage (Vdss)


BSZ160N10NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSZ160N10NS3GATMA1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
BSZ160N10NS3GATMA1 More Descriptions
MOSFET, N-CH, 100V, 40A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drai
Single N-Channel 100 V 16 mOhm 19 nC OptiMOS™ Power Mosfet - TSDSON-8
Transistor MOSFET N-CH 100V 40A 8-Pin PG-TSDSON T/R
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TSDSON-8, RoHSInfineon SCT
MOSFET, N-CH, 100V, 40A, 8TSDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:63W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Product Comparison
The three parts on the right have similar specifications to BSZ160N10NS3GATMA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Technology
    Terminal Position
    Terminal Form
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Number of Terminals
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Operating Temperature (Max)
    Polarity/Channel Type
    FET Technology
    Contact Plating
    Mount
    Number of Pins
    Halogen Free
    Rise Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    REACH SVHC
    Lead Free
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Fall Time (Typ)
    Turn-Off Delay Time
    View Compare
  • BSZ160N10NS3GATMA1
    BSZ160N10NS3GATMA1
    18 Weeks
    Surface Mount
    8-PowerTDFN
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    e3
    no
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    8541.29.00.95
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    not_compliant
    8
    S-PDSO-N5
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.1W Ta 63W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    16m Ω @ 20A, 10V
    3.5V @ 12μA
    1700pF @ 50V
    8A Ta 40A Tc
    25nC @ 10V
    100V
    6V 10V
    ±20V
    40A
    0.016Ohm
    160A
    100V
    80 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSZ16DN25NS3 G
    -
    -
    -
    YES
    SILICON
    -
    -
    -
    -
    e3
    icon-pbfree no
    -
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    -
    DUAL
    NO LEAD
    not_compliant
    8
    S-PDSO-N5
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    -
    ENHANCEMENT MODE
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    -
    -
    10.9A
    0.165Ohm
    44A
    250V
    120 mJ
    RoHS Compliant
    5
    NOT SPECIFIED
    NOT SPECIFIED
    150°C
    N-CHANNEL
    METAL-OXIDE SEMICONDUCTOR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSZ150N10LS3GATMA1
    18 Weeks
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2013
    e3
    -
    Active
    1 (Unlimited)
    5
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    not_compliant
    -
    S-PDSO-N5
    -
    1
    SINGLE WITH BUILT-IN DIODE
    2.1W Ta 63W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    15m Ω @ 20A, 10V
    2.1V @ 33μA
    2500pF @ 50V
    40A Tc
    35nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    0.02Ohm
    160A
    -
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    Tin
    Surface Mount
    8
    Halogen Free
    4.6ns
    40A
    1.7V
    20V
    100V
    100V
    No SVHC
    Contains Lead
    -
    -
    -
    -
    -
  • BSZ110N08NS5ATMA1
    18 Weeks
    Surface Mount
    8-PowerTDFN
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2013
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    not_compliant
    -
    S-PDSO-N3
    -
    1
    -
    50W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    11m Ω @ 20A, 10V
    3.8V @ 22μA
    1300pF @ 40V
    40A Tc
    18.5nC @ 10V
    -
    6V 10V
    ±20V
    -
    -
    -
    -
    40 mJ
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    Surface Mount
    8
    Halogen Free
    3ns
    40A
    -
    20V
    80V
    80V
    -
    Contains Lead
    1
    Single
    9 ns
    3 ns
    15 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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