BSS84TA

Diodes Incorporated BSS84TA

Part Number:
BSS84TA
Manufacturer:
Diodes Incorporated
Ventron No:
3554607-BSS84TA
Description:
MOSFET P-CH 50V 130MA SOT23-3
ECAD Model:
Datasheet:
BSS84TA

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Specifications
Diodes Incorporated BSS84TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84TA.
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    10Ohm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -50V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -130mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    360mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    10 Ω @ 100mA, 5V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    40pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    130mA Ta
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    10 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    130mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -50V
  • Height
    1mm
  • Length
    2.9mm
  • Width
    1.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS84TA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 40pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 130mA amps.In this device, the drain-source breakdown voltage is -50V and VGS=-50V, so the drain-source breakdown voltage is -50V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 50V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V).

BSS84TA Features
a continuous drain current (ID) of 130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)


BSS84TA Applications
There are a lot of Diodes Incorporated
BSS84TA applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
BSS84TA More Descriptions
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
MOSFET, P, 50V, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Threshold Voltage Vgs Typ:-1.5V; Transistor Case Style:SOT-23; SVHC:No SVHC (15-Dec-2010); Package / Case:SOT-23; Pin Configuration:1(G), 2(S),3(D); Power Dissipation Pd:360mW; Pulse Current Idm:520mA; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:-2V; Voltage Vgs th Min:-0.8V
MOSFET, P, 50V, SOT-23; Transistor type:Enhancement; Voltage, Vds typ:-50V; Current, Id cont:0.13A; Resistance, Rds on:10R; Voltage, Vgs Rds on measurement:5V; Voltage, Vgs th typ:-1.5V; Case style:SOT-23 (TO-236); Current, Idm RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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