Diodes Incorporated BSS84TA
- Part Number:
- BSS84TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554607-BSS84TA
- Description:
- MOSFET P-CH 50V 130MA SOT23-3
- Datasheet:
- BSS84TA
Diodes Incorporated BSS84TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS84TA.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance10Ohm
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-130mA
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max360mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10 Ω @ 100mA, 5V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds40pF @ 25V
- Current - Continuous Drain (Id) @ 25°C130mA Ta
- Rise Time10ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±20V
- Fall Time (Typ)10 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)130mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-50V
- Height1mm
- Length2.9mm
- Width1.3mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS84TA Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 40pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 130mA amps.In this device, the drain-source breakdown voltage is -50V and VGS=-50V, so the drain-source breakdown voltage is -50V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 50V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V).
BSS84TA Features
a continuous drain current (ID) of 130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)
BSS84TA Applications
There are a lot of Diodes Incorporated
BSS84TA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 40pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 130mA amps.In this device, the drain-source breakdown voltage is -50V and VGS=-50V, so the drain-source breakdown voltage is -50V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 50V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V).
BSS84TA Features
a continuous drain current (ID) of 130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)
BSS84TA Applications
There are a lot of Diodes Incorporated
BSS84TA applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
BSS84TA More Descriptions
Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R
MOSFET, P, 50V, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Threshold Voltage Vgs Typ:-1.5V; Transistor Case Style:SOT-23; SVHC:No SVHC (15-Dec-2010); Package / Case:SOT-23; Pin Configuration:1(G), 2(S),3(D); Power Dissipation Pd:360mW; Pulse Current Idm:520mA; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:-2V; Voltage Vgs th Min:-0.8V
MOSFET, P, 50V, SOT-23; Transistor type:Enhancement; Voltage, Vds typ:-50V; Current, Id cont:0.13A; Resistance, Rds on:10R; Voltage, Vgs Rds on measurement:5V; Voltage, Vgs th typ:-1.5V; Case style:SOT-23 (TO-236); Current, Idm RoHS Compliant: Yes
MOSFET, P, 50V, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Threshold Voltage Vgs Typ:-1.5V; Transistor Case Style:SOT-23; SVHC:No SVHC (15-Dec-2010); Package / Case:SOT-23; Pin Configuration:1(G), 2(S),3(D); Power Dissipation Pd:360mW; Pulse Current Idm:520mA; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:-2V; Voltage Vgs th Min:-0.8V
MOSFET, P, 50V, SOT-23; Transistor type:Enhancement; Voltage, Vds typ:-50V; Current, Id cont:0.13A; Resistance, Rds on:10R; Voltage, Vgs Rds on measurement:5V; Voltage, Vgs th typ:-1.5V; Case style:SOT-23 (TO-236); Current, Idm RoHS Compliant: Yes
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