Infineon Technologies BSS84PWH6327XTSA1

Name: BSS84PWH6327XTSA1
Brand: Infineon Technologies
SKU: 2479164-BSS84PWH6327XTSA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS84PWH6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2479164-BSS84PWH6327XTSA1

Description:: MOSFET P-CH 60V 150MA SOT-323

ECAD Model:

Datasheet:: BSS84PWH6327XTSA1

Specifications

Infineon Technologies BSS84PWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS84PWH6327XTSA1.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SIPMOS®
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-150mA
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
300mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300mW
Turn On Delay Time
6.7 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
8 Ω @ 150mA, 10V
Vgs(th) (Max) @ Id
2V @ 20μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
19.1pF @ 25V
Current - Continuous Drain (Id) @ 25°C
150mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V
Rise Time
16.2ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
20.5 ns
Turn-Off Delay Time
8.6 ns
Continuous Drain Current (ID)
-150mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
-60V
Drain-source On Resistance-Max
8Ohm
Drain to Source Breakdown Voltage
-60V
Max Junction Temperature (Tj)
150°C
Height
1mm
Length
2mm
Width
1.25mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS84PWH6327XTSA1 Description
Infineon Technologies' CoolMOSTM 7th generation platform, based on the superjunction (SJ) principle, is a game-changing technology for high-voltage power MOSFETs. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. The benefits of a fast switching SJ MOSFET with exceptional ease of use are combined with reduced ringing, superior body diode endurance against hard commutation, and outstanding ESD performance.

BSS84PWH6327XTSA1 Features
P-Channel
Mode of enhancement
Avalanche is a rated game.
Level of Logic
dv/dt

BSS84PWH6327XTSA1 Applications
Switching applications

BSS84PWH6327XTSA1 More Descriptions

Single P-Channel 60 V 8 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-323
Mosfet, P-Ch, 60V, 0.15A, Sot-323; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:150Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Infineon BSS84PWH6327XTSA1
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Certification