Infineon Technologies BSS84PH6327XTSA2

Name: BSS84PH6327XTSA2
Brand: Infineon Technologies
SKU: 2479146-BSS84PH6327XTSA2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS84PH6327XTSA2

Manufacturer:: Infineon Technologies

Ventron No:: 2479146-BSS84PH6327XTSA2

Description:: MOSFET P-CH 60V 170MA SOT-23

ECAD Model:

Datasheet:: BSS84PH6327XTSA2

Specifications

Infineon Technologies BSS84PH6327XTSA2 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSS84PH6327XTSA2.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2002
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
12Ohm
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Number of Channels
1
Voltage
60V
Power Dissipation-Max
360mW Ta
Element Configuration
Single
Current
17A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
360mW
Turn On Delay Time
6.7 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id
2V @ 20μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
19pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V
Rise Time
16.2ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
8.6 ns
Continuous Drain Current (ID)
170mA
Threshold Voltage
-1.5V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
-60V
Nominal Vgs
-1.5 V
Height
900μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSS84PH6327XTSA2 Description
BSS84PH6327XTSA2 is a P-channel Power MOSFET from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of BSS84PH6327XTSA2 is -55°C~150°C TJ and its maximum power dissipation is 360mW Ta. BSS84PH6327XTSA2 has 3 pins and it is available in Tape & Reel (TR) packaging way.

BSS84PH6327XTSA2 Features
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rate

BSS84PH6327XTSA2 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

BSS84PH6327XTSA2 More Descriptions

Transistor: P-MOSFET; unipolar; -60V; -0.17A; 8ohm; 0.36W; -55 150 deg.C; SMD; SOT23; AEC-Q100
INFINEON SMD Autom.MOSFET PFET -60V -170mA 8Ω 150°C SOT-223 BSS84PL6327
MOSFET P-CH 60V 0.17A SOT23 / Trans MOSFET P-CH 60V 0.17A Automotive 3-Pin SOT-23 T/R
Single P-Channel 60 V 8 Ohm 1 nC SIPMOS® Small Signal Mosfet - SOT-23
60V 170mA 8´Î@10V170mA 360mW 2V@20Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:170Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V; Power Dissipation:360Mw; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon BSS84PH6327XTSA2.
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 8 / Gate-Source Voltage V = 20 / Fall Time ns = 20.5 / Rise Time ns = 16.2 / Turn-OFF Delay Time ns = 8.6 / Turn-ON Delay Time ns = 6.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 360mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018); Avalanche Single Pulse Energy Eas: 2.6mJ; Capacitance Ciss Typ: 19pF; Current Idss Max: 1µA; Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Fall Time tf: 34ns; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 12ohm; On State resistance @ Vgs = 10V: 8ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 360mW; Pulse Current Idm: 680mA; Reverse Recovery Time trr Typ: 23ns

Certification