BSS84AKW,115

Nexperia USA Inc. BSS84AKW,115

Part Number:
BSS84AKW,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3585903-BSS84AKW,115
Description:
MOSFET P-CH 50V 150MA SOT323
ECAD Model:
Datasheet:
BSS84AKW,115

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Specifications
Nexperia USA Inc. BSS84AKW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS84AKW,115.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101, TrenchMOS™
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    7.5Ohm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    260mW Ta 830mW Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    260mW
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 100mA, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    36pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    150mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.35nC @ 5V
  • Rise Time
    11ns
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    150mA
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    -50V
  • Drain to Source Breakdown Voltage
    -50V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS84AKW,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 25V.This device conducts a continuous drain current (ID) of 150mA, which is the maximum continuous current transistor can conduct.Using VGS=-50V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -50V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -50V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

BSS84AKW,115 Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)


BSS84AKW,115 Applications
There are a lot of Nexperia USA Inc.
BSS84AKW,115 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
BSS84AKW,115 More Descriptions
BSS84AKW - 50 V, 150 mA P-channel Trench MOSFET
Trans MOSFET P-CH 50V 0.15A Automotive 3-Pin SC-70 T/R
P-Channel 50 V 7.5 Ohm 260 mW 0.26 nC TrenchMOS FET - SOT-323
Small Signal Field-Effect Transistor, 0.15A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P CH MOSFET, TRENCH, -50V, -150MA, SOT-323; Transistor Polarity:P Channel; Continuous Drain Current Id:-0.15A; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:-10V ;RoHS Compliant: Yes
STANDARD MARKING * REEL PACK, SMD, 7'
NOW NEXPERIA BSS84AKW - SMALL SI
BSS84AKW,115 Detail Images
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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