Nexperia USA Inc. BSS84AKW,115
- Part Number:
- BSS84AKW,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3585903-BSS84AKW,115
- Description:
- MOSFET P-CH 50V 150MA SOT323
- Datasheet:
- BSS84AKW,115
Nexperia USA Inc. BSS84AKW,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS84AKW,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101, TrenchMOS™
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance7.5Ohm
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max260mW Ta 830mW Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation260mW
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 100mA, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds36pF @ 25V
- Current - Continuous Drain (Id) @ 25°C150mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.35nC @ 5V
- Rise Time11ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)150mA
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage-50V
- Drain to Source Breakdown Voltage-50V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS84AKW,115 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 25V.This device conducts a continuous drain current (ID) of 150mA, which is the maximum continuous current transistor can conduct.Using VGS=-50V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -50V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -50V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS84AKW,115 Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)
BSS84AKW,115 Applications
There are a lot of Nexperia USA Inc.
BSS84AKW,115 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 36pF @ 25V.This device conducts a continuous drain current (ID) of 150mA, which is the maximum continuous current transistor can conduct.Using VGS=-50V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -50V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With -50V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS84AKW,115 Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)
BSS84AKW,115 Applications
There are a lot of Nexperia USA Inc.
BSS84AKW,115 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
BSS84AKW,115 More Descriptions
BSS84AKW - 50 V, 150 mA P-channel Trench MOSFET
Trans MOSFET P-CH 50V 0.15A Automotive 3-Pin SC-70 T/R
P-Channel 50 V 7.5 Ohm 260 mW 0.26 nC TrenchMOS FET - SOT-323
Small Signal Field-Effect Transistor, 0.15A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P CH MOSFET, TRENCH, -50V, -150MA, SOT-323; Transistor Polarity:P Channel; Continuous Drain Current Id:-0.15A; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:-10V ;RoHS Compliant: Yes
STANDARD MARKING * REEL PACK, SMD, 7'
NOW NEXPERIA BSS84AKW - SMALL SI
Trans MOSFET P-CH 50V 0.15A Automotive 3-Pin SC-70 T/R
P-Channel 50 V 7.5 Ohm 260 mW 0.26 nC TrenchMOS FET - SOT-323
Small Signal Field-Effect Transistor, 0.15A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P CH MOSFET, TRENCH, -50V, -150MA, SOT-323; Transistor Polarity:P Channel; Continuous Drain Current Id:-0.15A; Drain Source Voltage Vds:-50V; On Resistance Rds(on):4.5ohm; Rds(on) Test Voltage Vgs:-10V ;RoHS Compliant: Yes
STANDARD MARKING * REEL PACK, SMD, 7'
NOW NEXPERIA BSS84AKW - SMALL SI
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