Nexperia USA Inc. BSS84AKMB,315
- Part Number:
- BSS84AKMB,315
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2484712-BSS84AKMB,315
- Description:
- MOSFET P-CH 50V 230MA 3DFN
- Datasheet:
- BSS84AKMB,315
Nexperia USA Inc. BSS84AKMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS84AKMB,315.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Pin Count3
- Number of Elements1
- Power Dissipation-Max360mW Ta 2.7W Tc
- Element ConfigurationSingle
- Power Dissipation715mW
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs7.5 Ω @ 100mA, 10V
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds36pF @ 25V
- Current - Continuous Drain (Id) @ 25°C230mA Ta
- Gate Charge (Qg) (Max) @ Vgs0.35nC @ 5V
- Rise Time11ns
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)230mA
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage-50V
- Drain to Source Breakdown Voltage-50V
- RoHS StatusROHS3 Compliant
BSS84AKMB,315 Overview
The maximum input capacitance of this device is 36pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=-50V, and ID flows to VDS at -50VVDS, the drain-source breakdown voltage is -50V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -50V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 50V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
BSS84AKMB,315 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)
BSS84AKMB,315 Applications
There are a lot of Nexperia USA Inc.
BSS84AKMB,315 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 36pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=-50V, and ID flows to VDS at -50VVDS, the drain-source breakdown voltage is -50V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -50V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 50V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
BSS84AKMB,315 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)
BSS84AKMB,315 Applications
There are a lot of Nexperia USA Inc.
BSS84AKMB,315 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
BSS84AKMB,315 More Descriptions
Mosfet Transistor, P Channel, -230 Ma, -50 V, 4.5 Ohm, -10 V, -1.6 V Rohs Compliant: Yes |Nexperia BSS84AKMB,315
BSS84AKMB - 50 V, single P-channel Trench MOSFET
Trans MOSFET P-CH 50V 0.23A Automotive 3-Pin DFN-B T/R
MOSFET, P-CH, -50V, -0.23A, SOT883B-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Source Voltage Vds:-50V; On
MOSFET P-CH 50V 230MA DFN1006B-3
BSS84AKMB - 50 V, single P-channel Trench MOSFET
Trans MOSFET P-CH 50V 0.23A Automotive 3-Pin DFN-B T/R
MOSFET, P-CH, -50V, -0.23A, SOT883B-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Source Voltage Vds:-50V; On
MOSFET P-CH 50V 230MA DFN1006B-3
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
09 April 2024
INA826AIDR Layout and Selection Guide
Ⅰ. Description of INA826AIDRⅡ. Pin configuration and functionsⅢ. Functional features of INA826AIDRⅣ. What impact does external resistance have on the stability of INA826AIDR?Ⅴ. Schematic diagram and working principle... -
10 April 2024
LM2904DT Dual Operational Amplifier: Features, Package and Specifications
Ⅰ. Overview of LM2904DTⅡ. Electrical characteristic curvesⅢ. Features of LM2904DTⅣ. Package of LM2904DTⅤ. Supply voltage and current requirements of LM2904DTⅥ. Specifications of LM2904DTⅦ. How to use LM2904DT in... -
10 April 2024
STM32F103CBT6 Microcontroller Features, Application and STM32F103CBT6 vs CKS32F103C8T6
Ⅰ. Description of STM32F103CBT6Ⅱ. Low-power modes of STM32F103CBT6Ⅲ. Functional features of STM32F103CBT6Ⅳ. Application fields of STM32F103CBT6Ⅴ. GPIO attributes and configuration process of STM32F103CBT6Ⅵ. How to program and debug... -
11 April 2024
A Complete Guide to IR2104 Half-Bridge Driver
Ⅰ. IR2104 descriptionⅡ. IR2104 half-bridge driver circuit characteristicsⅢ. IR2104 half-bridge driver working principleⅣ. Practical application of IR2104Ⅴ. Recommended operating conditions of IR2104Ⅵ. What are the heat dissipation measures...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.