BSS84AKMB,315

Nexperia USA Inc. BSS84AKMB,315

Part Number:
BSS84AKMB,315
Manufacturer:
Nexperia USA Inc.
Ventron No:
2484712-BSS84AKMB,315
Description:
MOSFET P-CH 50V 230MA 3DFN
ECAD Model:
Datasheet:
BSS84AKMB,315

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Specifications
Nexperia USA Inc. BSS84AKMB,315 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS84AKMB,315.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    360mW Ta 2.7W Tc
  • Element Configuration
    Single
  • Power Dissipation
    715mW
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    7.5 Ω @ 100mA, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    36pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    230mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    0.35nC @ 5V
  • Rise Time
    11ns
  • Drain to Source Voltage (Vdss)
    50V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    230mA
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    -50V
  • Drain to Source Breakdown Voltage
    -50V
  • RoHS Status
    ROHS3 Compliant
Description
BSS84AKMB,315 Overview
The maximum input capacitance of this device is 36pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=-50V, and ID flows to VDS at -50VVDS, the drain-source breakdown voltage is -50V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -50V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 50V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

BSS84AKMB,315 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 48 ns
a 50V drain to source voltage (Vdss)


BSS84AKMB,315 Applications
There are a lot of Nexperia USA Inc.
BSS84AKMB,315 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
BSS84AKMB,315 More Descriptions
Mosfet Transistor, P Channel, -230 Ma, -50 V, 4.5 Ohm, -10 V, -1.6 V Rohs Compliant: Yes |Nexperia BSS84AKMB,315
BSS84AKMB - 50 V, single P-channel Trench MOSFET
Trans MOSFET P-CH 50V 0.23A Automotive 3-Pin DFN-B T/R
MOSFET, P-CH, -50V, -0.23A, SOT883B-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-230mA; Source Voltage Vds:-50V; On
MOSFET P-CH 50V 230MA DFN1006B-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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