NXP USA Inc. BSR58,215
- Part Number:
- BSR58,215
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2495915-BSR58,215
- Description:
- JFET N-CH 40V 250MW SOT23
- Datasheet:
- BSR56(57,58)
NXP USA Inc. BSR58,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BSR58,215.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBSR58
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Operating ModeDEPLETION MODE
- Power - Max250mW
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Drain Current-Max (Abs) (ID)0.005A
- Drain-source On Resistance-Max60Ohm
- DS Breakdown Voltage-Min40V
- FET TechnologyJUNCTION
- Power Dissipation-Max (Abs)0.225W
- Feedback Cap-Max (Crss)5 pF
- Current - Drain (Idss) @ Vds (Vgs=0)8mA @ 15V
- Voltage - Cutoff (VGS off) @ Id800mV @ 0.5nA
- Voltage - Breakdown (V(BR)GSS)40V
- Resistance - RDS(On)60Ohm
- RoHS StatusROHS3 Compliant
BSR58,215 Description
The BSR58,215 is a Symmetrical silicon N-channel depletion type junction field-effect transistor (FET) in a plastic microminiature envelope designed for application in thick and thin-film circuits.
BSR58,215 Features
Interchangeable drain and source connections
Small package
BSR58,215 Applications
Low-power, chopper or switching applications
Thick and thin-film circuits
The BSR58,215 is a Symmetrical silicon N-channel depletion type junction field-effect transistor (FET) in a plastic microminiature envelope designed for application in thick and thin-film circuits.
BSR58,215 Features
Interchangeable drain and source connections
Small package
BSR58,215 Applications
Low-power, chopper or switching applications
Thick and thin-film circuits
BSR58,215 More Descriptions
Trans JFET N-CH 40V 80mA Si 3-Pin TO-236AB T/R
ON SEMICONDUCTOR LV8741V-MPB-E DRIVER, STEPPING, 35V, PWM, 44SSOP
N-channel FETs 40V 250mW 8mA~80mA 60Ω 5PF SOT-23 PbFree
Small Signal Field-Effect Transistor, 0.005A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET
JFET Transistors TAPE7 FET-RFSS
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
BSR56; BSR57; BSR58 - N-channel FETs
ON SEMICONDUCTOR LV8741V-MPB-E DRIVER, STEPPING, 35V, PWM, 44SSOP
N-channel FETs 40V 250mW 8mA~80mA 60Ω 5PF SOT-23 PbFree
Small Signal Field-Effect Transistor, 0.005A I(D), 40V, 1-Element, N-Channel, Silicon, Junction FET
JFET Transistors TAPE7 FET-RFSS
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
BSR56; BSR57; BSR58 - N-channel FETs
The three parts on the right have similar specifications to BSR58,215.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModePower - MaxFET TypeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Feedback Cap-Max (Crss)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdVoltage - Breakdown (V(BR)GSS)Resistance - RDS(On)RoHS StatusLifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightPbfree CodeVoltage - Rated DCMax Power DissipationCurrent RatingElement ConfigurationPower DissipationDrain to Source Voltage (Vdss)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source ResistanceREACH SVHCRadiation HardeningLead FreeMax Junction Temperature (Tj)HeightLengthWidthBreakdown VoltageView Compare
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BSR58,215Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)1997e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95Other TransistorsDUALGULL WING26040BSR583R-PDSO-G3Not Qualified1SINGLEDEPLETION MODE250mWN-ChannelSWITCHING0.005A60Ohm40VJUNCTION0.225W5 pF8mA @ 15V800mV @ 0.5nA40V60OhmROHS3 Compliant-------------------------
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Surface MountTO-236-3, SC-59, SOT-23-3-SILICON150°C TJTape & Reel (TR)2008e3Obsolete1 (Unlimited)3EAR99-8541.21.00.95Other TransistorsDUALGULL WING--BSR56---1-DEPLETION MODE-N-ChannelSWITCHING---JUNCTION-5 pF50mA @ 15V4V @ 0.5nA-25OhmROHS3 CompliantLAST SHIPMENTS (Last Updated: 3 days ago)7 WeeksTinSurface Mount330mgyes40V250mW50mASingle250mW750mV50mA-40V25OhmNo SVHCNoLead Free-----
-
Surface MountTO-236-3, SC-59, SOT-23-3-SILICON150°C TJTape & Reel (TR)2003e3Active1 (Unlimited)3EAR99--Other TransistorsDUALGULL WING--BSR57---1-DEPLETION MODE-N-ChannelSWITCHING---JUNCTION-5 pF20mA @ 15V2V @ 0.5nA-40OhmROHS3 CompliantACTIVE (Last Updated: 3 days ago)39 WeeksTinSurface Mount330mgyes40V250mW20mASingle250mW500mV20mA-40V40Ohm-NoLead Free150°C1.11mm2.9mm1.3mm-
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Surface MountTO-236-3, SC-59, SOT-23-3-SILICON150°C TJTape & Reel (TR)2008e3Active1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95Other TransistorsDUALGULL WING26030BSR58---1-DEPLETION MODE-N-ChannelSWITCHING---JUNCTION-5 pF8mA @ 15V800mV @ 0.5nA-60OhmROHS3 CompliantACTIVE (Last Updated: 3 days ago)39 Weeks-Surface Mount330mgyes40V250mW50mASingle250mW40V80mA-40V60OhmNo SVHCNoLead Free-970μm2.9mm1.3mm40V
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