Infineon Technologies BSP373 E6327

Name: BSP373 E6327
Brand: Infineon Technologies
SKU: 2853879-BSP373 E6327
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP373 E6327

Manufacturer:: Infineon Technologies

Ventron No:: 2853879-BSP373 E6327

Description:: MOSFET N-CH 100V 1.7A SOT-223

ECAD Model:

Datasheet:: BSP373

Specifications

Infineon Technologies BSP373 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP373 E6327.

Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SIPMOS®
Published
2007
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
255
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.8W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
300m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.7A Ta
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
1.7A
Drain-source On Resistance-Max
0.3Ohm
Pulsed Drain Current-Max (IDM)
6.8A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
45 mJ
RoHS Status
Non-RoHS Compliant

Description

BSP373 E6327 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 45 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 550pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 1.7A.There is a peak drain current of 6.8A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

BSP373 E6327 Features
the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 6.8A.
a 100V drain to source voltage (Vdss)

BSP373 E6327 Applications
There are a lot of Infineon Technologies
BSP373 E6327 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

Certification