BSP373 E6327

Infineon Technologies BSP373 E6327

Part Number:
BSP373 E6327
Manufacturer:
Infineon Technologies
Ventron No:
2853879-BSP373 E6327
Description:
MOSFET N-CH 100V 1.7A SOT-223
ECAD Model:
Datasheet:
BSP373

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Specifications
Infineon Technologies BSP373 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP373 E6327.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SIPMOS®
  • Published
    2007
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    255
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.8W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    300m Ω @ 1.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    550pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    1.7A
  • Drain-source On Resistance-Max
    0.3Ohm
  • Pulsed Drain Current-Max (IDM)
    6.8A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    45 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
BSP373 E6327 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 45 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 550pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 1.7A.There is a peak drain current of 6.8A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

BSP373 E6327 Features
the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 6.8A.
a 100V drain to source voltage (Vdss)


BSP373 E6327 Applications
There are a lot of Infineon Technologies
BSP373 E6327 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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