BSP372 E6327

Infineon Technologies BSP372 E6327

Part Number:
BSP372 E6327
Manufacturer:
Infineon Technologies
Ventron No:
2492912-BSP372 E6327
Description:
MOSFET N-CH 100V 1.7A SOT-223
ECAD Model:
Datasheet:
BSP372

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Specifications
Infineon Technologies BSP372 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP372 E6327.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    SIPMOS®
  • Published
    2007
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    235
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G4
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.8W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    310m Ω @ 1.7A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    520pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A Ta
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±14V
  • Drain Current-Max (Abs) (ID)
    1.7A
  • Drain-source On Resistance-Max
    0.31Ohm
  • Pulsed Drain Current-Max (IDM)
    6.8A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    45 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
BSP372 E6327 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 45 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 520pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 1.7A.A maximum pulsed drain current of 6.8A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (5V).

BSP372 E6327 Features
the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 6.8A.
a 100V drain to source voltage (Vdss)


BSP372 E6327 Applications
There are a lot of Infineon Technologies
BSP372 E6327 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
BSP372 E6327 More Descriptions
MOSFET N-CH 100V 1.7A SOT-223
OEMs, CMs ONLY (NO BROKERS)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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