Infineon Technologies BSP315PH6327XTSA1
- Part Number:
- BSP315PH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479255-BSP315PH6327XTSA1
- Description:
- MOSFET P-CH 60V 1.17A SOT-223
- Datasheet:
- BSP315PH6327XTSA1
Infineon Technologies BSP315PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP315PH6327XTSA1.
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierPG-SOT223-4
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- SeriesSIPMOS®
- Published1999
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.8W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.8W
- Case ConnectionDRAIN
- Turn On Delay Time24 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs800m Ω @ 1.17A, 10V
- Vgs(th) (Max) @ Id2V @ 160μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.17A Ta
- Gate Charge (Qg) (Max) @ Vgs7.8nC @ 10V
- Rise Time9ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time32 ns
- Continuous Drain Current (ID)1.17A
- Threshold Voltage-1.5V
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage-60V
- Drain-source On Resistance-Max0.8Ohm
- Drain to Source Breakdown Voltage-60V
- Dual Supply Voltage-60V
- Recovery Time46 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-1.5 V
- Height1.8mm
- Length6.5mm
- Width6.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSP315PH6327XTSA1 Description
BSP315PH6327XTSA1 are small signal transistors which are transistors used to amplify low-level signals, but they can also be used as switches. The typical IC values of small signal transistors are between 10 and 500, and the maximum HFE rating is between 80 and 600 mA. They come in two forms: NPN and PNP.
BSP315PH6327XTSA1 Features
·P-Channel Enhancement mode Avalanche rated ·Logic Level ·dv/dtrated ·Pb-free lead plating;RoHS compliant ·Qualified according to AEC Q101 ·Halogen-free according to IEC61249-2-21 BSP315PH6327XTSA1 Applications Small-Signal-Transistor
·P-Channel Enhancement mode Avalanche rated ·Logic Level ·dv/dtrated ·Pb-free lead plating;RoHS compliant ·Qualified according to AEC Q101 ·Halogen-free according to IEC61249-2-21 BSP315PH6327XTSA1 Applications Small-Signal-Transistor
BSP315PH6327XTSA1 More Descriptions
Trans MOSFET P-CH 60V 1.17A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel 60 V 0.8 Ohm 5.2 nC SIPMOS® Small Signal Mosfet - SOT-223
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt X7R 10% Soft Term
P Channel Mosfet, -60V, 1.17A, Sot-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Infineon BSP315P
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.17 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 800 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
Single P-Channel 60 V 0.8 Ohm 5.2 nC SIPMOS® Small Signal Mosfet - SOT-223
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt X7R 10% Soft Term
P Channel Mosfet, -60V, 1.17A, Sot-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Infineon BSP315P
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.17 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 800 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
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