BSP315PH6327XTSA1

Infineon Technologies BSP315PH6327XTSA1

Part Number:
BSP315PH6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
2479255-BSP315PH6327XTSA1
Description:
MOSFET P-CH 60V 1.17A SOT-223
ECAD Model:
Datasheet:
BSP315PH6327XTSA1

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Specifications
Infineon Technologies BSP315PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP315PH6327XTSA1.
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    PG-SOT223-4
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    SIPMOS®
  • Published
    1999
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.8W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    24 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    800m Ω @ 1.17A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 160μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    160pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.17A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    7.8nC @ 10V
  • Rise Time
    9ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    1.17A
  • Threshold Voltage
    -1.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    -60V
  • Drain-source On Resistance-Max
    0.8Ohm
  • Drain to Source Breakdown Voltage
    -60V
  • Dual Supply Voltage
    -60V
  • Recovery Time
    46 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1.5 V
  • Height
    1.8mm
  • Length
    6.5mm
  • Width
    6.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSP315PH6327XTSA1 Description    BSP315PH6327XTSA1 are small signal transistors which are transistors used to amplify low-level signals, but they can also be used as switches. The typical IC values of small signal transistors are between 10 and 500, and the maximum HFE rating is between 80 and 600 mA. They come in two forms: NPN and PNP.     BSP315PH6327XTSA1 Features
·P-Channel Enhancement mode Avalanche rated ·Logic Level ·dv/dtrated ·Pb-free lead plating;RoHS compliant ·Qualified according to AEC Q101 ·Halogen-free according to IEC61249-2-21   BSP315PH6327XTSA1 Applications   Small-Signal-Transistor    
BSP315PH6327XTSA1 More Descriptions
Trans MOSFET P-CH 60V 1.17A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel 60 V 0.8 Ohm 5.2 nC SIPMOS® Small Signal Mosfet - SOT-223
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt X7R 10% Soft Term
P Channel Mosfet, -60V, 1.17A, Sot-223; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Infineon BSP315P
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.17 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 800 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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