Nexperia USA Inc. BSP126,135

Name: BSP126,135
Brand: Nexperia USA Inc.
SKU: 2487947-BSP126,135
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP126,135

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2487947-BSP126,135

Description:: MOSFET N-CH 250V 375MA SOT223

ECAD Model:

Datasheet:: BSP126,135

Specifications

Nexperia USA Inc. BSP126,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSP126,135.

Factory Lead Time
4 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.5W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
120pF @ 25V
Current - Continuous Drain (Id) @ 25°C
375mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
375mA
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
250V
Drain Current-Max (Abs) (ID)
0.375A
Drain-source On Resistance-Max
5Ohm
Drain to Source Breakdown Voltage
250V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BSP126,135 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 120pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 375mA amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.A device can conduct a maximum continuous current of [0.375A] according to its drain current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 250V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).

BSP126,135 Features
a continuous drain current (ID) of 375mA
a drain-to-source breakdown voltage of 250V voltage

BSP126,135 Applications
There are a lot of Nexperia USA Inc.
BSP126,135 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

BSP126,135 More Descriptions

Trans MOSFET N-CH 250V 0.375A 4-Pin(3 Tab) SOT-223 T/R
N-channel enhancement mode vertical D-MOS transistor - SOT-223-3
N CH MOSFET, 250V, 375MA, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:375mA; Drain Source Voltage Vds:250V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes

Certification