Nexperia USA Inc. BSP126,115

Name: BSP126,115
Brand: Nexperia USA Inc.
SKU: 2487919-BSP126,115
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSP126,115

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2487919-BSP126,115

Description:: MOSFET N-CH 250V 375MA SOT223

ECAD Model:

Datasheet:: BSP126,115

Specifications

Nexperia USA Inc. BSP126,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSP126,115.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.75
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.5W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.5W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
120pF @ 25V
Current - Continuous Drain (Id) @ 25°C
375mA Ta
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
375mA
Drain-source On Resistance-Max
5Ohm
DS Breakdown Voltage-Min
250V
Feedback Cap-Max (Crss)
15 pF
RoHS Status
ROHS3 Compliant

Description

BSP126,115 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 120pF @ 25V.This device has a continuous drain current (ID) of [375mA], which is its maximum continuous current.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BSP126,115 Features
a continuous drain current (ID) of 375mA
a 250V drain to source voltage (Vdss)

BSP126,115 Applications
There are a lot of Nexperia USA Inc.
BSP126,115 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

BSP126,115 More Descriptions

On a Reel of 10, N-Channel MOSFET, 375 mA, 250 V, 3 Tab-Pin SOT-223 Nexperia BSP126, 115
BSP126 Series 250V 5 Ohm 1.5W N-Ch Enhancement Mode D-MOS Transistor - SOT-223
Trans MOSFET N-CH 250V 0.375A 4-Pin(3 Tab) SOT-223 T/R
MOSFET, N CH, 250V, 375MA, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:250V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:375mA; Package / Case:SOT-223; Power Dissipation Pd:1.5W; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:250V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

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