Infineon Technologies BSC160N10NS3GATMA1

Name: BSC160N10NS3GATMA1
Brand: Infineon Technologies
SKU: 2478791-BSC160N10NS3GATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC160N10NS3GATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2478791-BSC160N10NS3GATMA1

Description:: MOSFET N-CH 100V 42A TDSON-8

ECAD Model:

Datasheet:: BSC160N10NS3GATMA1

Part Pictures

Specifications

Infineon Technologies BSC160N10NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC160N10NS3GATMA1.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2008
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
60W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 50V
Current - Continuous Drain (Id) @ 25°C
8.8A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
8.8A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
50 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BSC160N10NS3GATMA1 Description
BSC160N10NS3GATMA1 is an N-channel Power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 100V. The operating temperature of BSC160N10NS3GATMA1 is -55°C~150°C TJ and its maximum power dissipation is 60W Tc. It has 8 pins and it is available in Tape & Reel (TR) packaging way.

BSC160N10NS3GATMA1 Features
Optima's ? 3 power transistor
Optimized for DC-DC conversion
N-channel, normal level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
Qualified according to JEDEC for target applications

BSC160N10NS3GATMA1 Applications
General-purpose amplifier
Switching applications
Power management
Industrial

BSC160N10NS3GATMA1 More Descriptions

Transistor, MOSFET, N-channel, 8.8A, 100V, 150C, 16mOhm, TDSON8EP | Infineon BSC160N10NS3G
Single N-Channel 100 V 33 mOhm 25 nC OptiMOS Power Mosfet - TDSON-8
Trans MOSFET N-CH 100V 8.8A Automotive 8-Pin TDSON EP T/R
Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; On Resistance Rds(On):0.0139Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V Rohs Compliant: Yes |Infineon BSC160N10NS3GATMA1.
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHSInfineon SCT
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Product Comparison

The three parts on the right have similar specifications to BSC160N10NS3GATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

Threshold Voltage

Pulsed Drain Current-Max (IDM)

REACH SVHC

View Compare
BSC160N10NS3GATMA1

Infineon Technologies

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

no

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

60W Tc

ENHANCEMENT MODE

60W

DRAIN

13 ns

N-Channel

SWITCHING

16m Ω @ 33A, 10V

3.5V @ 33μA

Halogen Free

1700pF @ 50V

8.8A Ta 42A Tc

25nC @ 10V

15ns

6V 10V

±20V

5 ns

22 ns

8.8A

20V

100V

50 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-
BSC100N03LSGATMA1

Infineon Technologies

-

-

Surface Mount

8-PowerTDFN

-

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

2.5W Ta 30W Tc

-

-

-

-

N-Channel

-

10mOhm @ 30A, 10V

2.2V @ 250μA

-

1500pF @ 15V

13A Ta 44A Tc

17nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

PG-TDSON-8-1

30V

-

-

-

-

-

BSC160N10NS3GATMA1 vs BSC100N03LSGATMA1
BSC159N10LSF G

Infineon Technologies

-

-

-

PG-TDSON-8

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N Channel

-

15.9mΩ @ 50A,10V

2.4V @ 72uA

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

100V

9.4A63A Tc

114W Tc

-

-

-

BSC160N10NS3GATMA1 vs BSC159N10LSF G
BSC109N10NS3GATMA1

Infineon Technologies

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2011

e3

no

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

78W Tc

ENHANCEMENT MODE

78W

DRAIN

12 ns

N-Channel

SWITCHING

10.9m Ω @ 46A, 10V

3.5V @ 45μA

Halogen Free

2500pF @ 50V

63A Tc

35nC @ 10V

7ns

6V 10V

±20V

5 ns

19 ns

63A

20V

100V

70 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

2.7V

252A

No SVHC

BSC160N10NS3GATMA1 vs BSC109N10NS3GATMA1