BSB013NE2LXI

Infineon Technologies BSB013NE2LXI

Part Number:
BSB013NE2LXI
Manufacturer:
Infineon Technologies
Ventron No:
2482767-BSB013NE2LXI
Description:
MOSFET N-CH 25V 163A WDSON-2
ECAD Model:
Datasheet:
BSB013NE2LXI

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Specifications
Infineon Technologies BSB013NE2LXI technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSB013NE2LXI.
  • Surface Mount
    YES
  • Number of Terminals
    3
  • Transistor Element Material
    SILICON
  • JESD-609 Code
    e4
  • Pbfree Code
    icon-pbfree yes
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • ECCN Code
    EAR99
  • Terminal Finish
    Silver/Nickel (Ag/Ni)
  • HTS Code
    8541.29.00.95
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-MBCC-N3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    150°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (Abs) (ID)
    163A
  • Drain-source On Resistance-Max
    0.0018Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • DS Breakdown Voltage-Min
    25V
  • Avalanche Energy Rating (Eas)
    130 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    57W
  • RoHS Status
    RoHS Compliant
Description
BSB013NE2LXI Description
BSB013NE2LXI is a 25v OptiMOS? Power-MOSFET. Ultra-low gate and output charge, together with the lowest on-state resistance in small footprint packages, make BSB013NE2LXI the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. The Operating and Storage Temperature Range is between -40 and 150℃. And the MOSFET BSB013NE2LXI is in the WDSON-2-3 package with 57W power dissipation.

BSB013NE2LXI Features
Optimized SyncFET for high-performance Buck converter
Integrated monolithic Schottky-like diode
Low profile (<0.7 mm)
100% avalanche tested
100% Rc Tested
Double-sided cooling

BSB013NE2LXI Applications
Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control
Product Comparison
The three parts on the right have similar specifications to BSB013NE2LXI.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    Power Dissipation-Max (Abs)
    RoHS Status
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Number of Terminations
    Additional Feature
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Factory Lead Time
    Contact Plating
    Mount
    Number of Pins
    Element Configuration
    Halogen Free
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    Power Dissipation
    Threshold Voltage
    Max Dual Supply Voltage
    REACH SVHC
    Radiation Hardening
    View Compare
  • BSB013NE2LXI
    BSB013NE2LXI
    YES
    3
    SILICON
    e4
    icon-pbfree yes
    3 (168 Hours)
    EAR99
    Silver/Nickel (Ag/Ni)
    8541.29.00.95
    FET General Purpose Power
    BOTTOM
    NO LEAD
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    3
    R-MBCC-N3
    Not Qualified
    150°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    N-CHANNEL
    163A
    0.0018Ohm
    400A
    25V
    130 mJ
    METAL-OXIDE SEMICONDUCTOR
    57W
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSB053N03LP G
    YES
    -
    SILICON
    e3
    -
    3 (168 Hours)
    EAR99
    MATTE TIN
    -
    FET General Purpose Power
    BOTTOM
    NO LEAD
    260
    compliant
    40
    3
    R-MBCC-N3
    Not Qualified
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    17A
    0.0053Ohm
    284A
    30V
    75 mJ
    -
    -
    RoHS Compliant
    Surface Mount
    3-WDSON
    -40°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2009
    Obsolete
    3
    AVALANCHE RATED
    MOSFET (Metal Oxide)
    2.3W Ta 42W Tc
    N-Channel
    5.3m Ω @ 30A, 10V
    2.2V @ 250μA
    2700pF @ 15V
    17A Ta 71A Tc
    29nC @ 10V
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSB012NE2LXIXUMA1
    -
    -
    -
    e4
    -
    3 (168 Hours)
    EAR99
    -
    -
    -
    -
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    3-WDSON
    -40°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2013
    Active
    -
    -
    MOSFET (Metal Oxide)
    2.8W Ta 57W Tc
    N-Channel
    1.2m Ω @ 30A, 10V
    2V @ 250μA
    5852pF @ 12V
    170A Tc
    82nC @ 10V
    -
    4.5V 10V
    ±20V
    26 Weeks
    Nickel
    Surface Mount
    3
    Single
    Halogen Free
    6ns
    4.6 ns
    34 ns
    170A
    20V
    25V
    Lead Free
    -
    -
    -
    -
    -
  • BSB056N10NN3GXUMA1
    -
    -
    SILICON
    e4
    yes
    3 (168 Hours)
    EAR99
    -
    -
    -
    BOTTOM
    -
    -
    -
    -
    3
    -
    -
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    9A
    0.0056Ohm
    -
    -
    450 mJ
    -
    -
    ROHS3 Compliant
    Surface Mount
    3-WDSON
    -40°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    Active
    3
    -
    MOSFET (Metal Oxide)
    2.8W Ta 78W Tc
    N-Channel
    5.6m Ω @ 30A, 10V
    3.5V @ 100μA
    5500pF @ 50V
    9A Ta 83A Tc
    74nC @ 10V
    -
    6V 10V
    ±20V
    26 Weeks
    Silver
    Surface Mount
    3
    -
    Halogen Free
    9ns
    -
    -
    9A
    20V
    -
    Lead Free
    2.8W
    2.7V
    100V
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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