Infineon Technologies BSB013NE2LXI
- Part Number:
- BSB013NE2LXI
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482767-BSB013NE2LXI
- Description:
- MOSFET N-CH 25V 163A WDSON-2
- Datasheet:
- BSB013NE2LXI
Infineon Technologies BSB013NE2LXI technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSB013NE2LXI.
- Surface MountYES
- Number of Terminals3
- Transistor Element MaterialSILICON
- JESD-609 Codee4
- Pbfree Codeicon-pbfree yes
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- ECCN CodeEAR99
- Terminal FinishSilver/Nickel (Ag/Ni)
- HTS Code8541.29.00.95
- SubcategoryFET General Purpose Power
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-MBCC-N3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (Abs) (ID)163A
- Drain-source On Resistance-Max0.0018Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)130 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)57W
- RoHS StatusRoHS Compliant
BSB013NE2LXI Description
BSB013NE2LXI is a 25v OptiMOS? Power-MOSFET. Ultra-low gate and output charge, together with the lowest on-state resistance in small footprint packages, make BSB013NE2LXI the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. The Operating and Storage Temperature Range is between -40 and 150℃. And the MOSFET BSB013NE2LXI is in the WDSON-2-3 package with 57W power dissipation.
BSB013NE2LXI Features
Optimized SyncFET for high-performance Buck converter
Integrated monolithic Schottky-like diode
Low profile (<0.7 mm)
100% avalanche tested
100% Rc Tested
Double-sided cooling
BSB013NE2LXI Applications
Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control
BSB013NE2LXI is a 25v OptiMOS? Power-MOSFET. Ultra-low gate and output charge, together with the lowest on-state resistance in small footprint packages, make BSB013NE2LXI the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. The Operating and Storage Temperature Range is between -40 and 150℃. And the MOSFET BSB013NE2LXI is in the WDSON-2-3 package with 57W power dissipation.
BSB013NE2LXI Features
Optimized SyncFET for high-performance Buck converter
Integrated monolithic Schottky-like diode
Low profile (<0.7 mm)
100% avalanche tested
100% Rc Tested
Double-sided cooling
BSB013NE2LXI Applications
Onboard charger
Mainboard
Notebook
DC-DC
VRD/VRM
LED
Motor control
The three parts on the right have similar specifications to BSB013NE2LXI.
-
ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPolarity/Channel TypeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyPower Dissipation-Max (Abs)RoHS StatusMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusNumber of TerminationsAdditional FeatureTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Factory Lead TimeContact PlatingMountNumber of PinsElement ConfigurationHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreePower DissipationThreshold VoltageMax Dual Supply VoltageREACH SVHCRadiation HardeningView Compare
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BSB013NE2LXIYES3SILICONe4icon-pbfree yes3 (168 Hours)EAR99Silver/Nickel (Ag/Ni)8541.29.00.95FET General Purpose PowerBOTTOMNO LEADNOT SPECIFIEDcompliantNOT SPECIFIED3R-MBCC-N3Not Qualified150°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGN-CHANNEL163A0.0018Ohm400A25V130 mJMETAL-OXIDE SEMICONDUCTOR57WRoHS Compliant---------------------------------------
-
YES-SILICONe3-3 (168 Hours)EAR99MATTE TIN-FET General Purpose PowerBOTTOMNO LEAD260compliant403R-MBCC-N3Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING-17A0.0053Ohm284A30V75 mJ--RoHS CompliantSurface Mount3-WDSON-40°C~150°C TJTape & Reel (TR)OptiMOS™2009Obsolete3AVALANCHE RATEDMOSFET (Metal Oxide)2.3W Ta 42W TcN-Channel5.3m Ω @ 30A, 10V2.2V @ 250μA2700pF @ 15V17A Ta 71A Tc29nC @ 10V30V4.5V 10V±20V------------------
-
---e4-3 (168 Hours)EAR99-----NOT SPECIFIED-NOT SPECIFIED-----------------ROHS3 CompliantSurface Mount3-WDSON-40°C~150°C TJTape & Reel (TR)OptiMOS™2013Active--MOSFET (Metal Oxide)2.8W Ta 57W TcN-Channel1.2m Ω @ 30A, 10V2V @ 250μA5852pF @ 12V170A Tc82nC @ 10V-4.5V 10V±20V26 WeeksNickelSurface Mount3SingleHalogen Free6ns4.6 ns34 ns170A20V25VLead Free-----
-
--SILICONe4yes3 (168 Hours)EAR99---BOTTOM----3---1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING-9A0.0056Ohm--450 mJ--ROHS3 CompliantSurface Mount3-WDSON-40°C~150°C TJTape & Reel (TR)OptiMOS™2011Active3-MOSFET (Metal Oxide)2.8W Ta 78W TcN-Channel5.6m Ω @ 30A, 10V3.5V @ 100μA5500pF @ 50V9A Ta 83A Tc74nC @ 10V-6V 10V±20V26 WeeksSilverSurface Mount3-Halogen Free9ns--9A20V-Lead Free2.8W2.7V100VNo SVHCNo
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