Fairchild/ON Semiconductor BDX53BTU
- Part Number:
- BDX53BTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585325-BDX53BTU
- Description:
- TRANS NPN DARL 80V 8A TO-220
- Datasheet:
- BDX53/A/B/C TO220B03 Pkg Drawing
Fairchild/ON Semiconductor BDX53BTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX53BTU.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationDARLINGTON WITH BUILT-IN DIODE
- Power - Max60W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A 3V
- Current - Collector Cutoff (Max)500μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)8A
- RoHS StatusROHS3 Compliant
BDX53BTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BDX53BTU Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A
BDX53BTU Applications
There are a lot of Rochester Electronics, LLC
BDX53BTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BDX53BTU Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A
BDX53BTU Applications
There are a lot of Rochester Electronics, LLC
BDX53BTU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BDX53BTU More Descriptions
Bipolar (BJT) Transistor NPN - Darlington 80V 8A 60W Through Hole TO-220
Medium Power NPN Darlington Bipolar Power Transistor
Darlington Transistors NPN Si Transistor Epitaxial
Medium Power NPN Darlington Bipolar Power Transistor
Darlington Transistors NPN Si Transistor Epitaxial
The three parts on the right have similar specifications to BDX53BTU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)RoHS StatusVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Supplier Device PackageBase Part NumberLifecycle StatusFactory Lead TimeNumber of PinsWeightPublishedECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingPolarityElement ConfigurationPower DissipationCase ConnectionCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningLead FreeView Compare
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BDX53BTUThrough HoleTO-220-3NOSILICON150°C TJTubee3noObsolete1 (Unlimited)3MATTE TINSINGLENOT APPLICABLEunknownNOT APPLICABLE3R-PSFM-T3COMMERCIAL1DARLINGTON WITH BUILT-IN DIODE60WSWITCHINGNPNNPN - Darlington750 @ 3A 3V500μATO-220AB2V @ 12mA, 3A80V8AROHS3 Compliant-----------------------------------------------
-
--------------------------------100V2V @ 12mA, 3APNP - DarlingtonTO-220-60WTubeTO-220-3150°C (TJ)Through Hole-750 @ 3A, 3V500µA8A--------------------------------
-
Through HoleTO-220-3--150°C TJTube--Obsolete1 (Unlimited)-----------60W--NPN - Darlington750 @ 3A 3V500μA-2V @ 12mA, 3A45V8A---------------TO-220-3BDX53------------------------------
-
Through HoleTO-220-3NOSILICON-65°C~150°C TJTubee3yesActive1 (Unlimited)3Tin (Sn)-260-403--1--AMPLIFIER-NPN - Darlington750 @ 3A 3V500μATO-220AB2V @ 12mA, 3A--ROHS3 Compliant---------------BDX53ACTIVE (Last Updated: 3 days ago)7 Weeks34.535924g1999EAR99LEADFORM OPTIONS ARE AVAILABLEOther Transistors100V65W8ANPNSingle40WCOLLECTOR100V8A100V20MHz2V100V5V7504A9.28mm10.28mm4.82mmNo SVHCNoLead Free
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