Fairchild/ON Semiconductor BDX53ATU

Name: BDX53ATU
Brand: Fairchild/ON Semiconductor
SKU: 3813409-BDX53ATU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BDX53ATU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813409-BDX53ATU

Description:: TRANS NPN DARL 60V 8A TO-220

ECAD Model:

Datasheet:: BDX53/A/B/C TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor BDX53ATU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX53ATU.

Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
60W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
8A
RoHS Status
ROHS3 Compliant

Description

BDX53ATU Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 2V @ 12mA, 3A means Ic has reached its maximum value(saturated).Product package TO-220-3 comes from the supplier.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.

BDX53ATU Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A
the supplier device package of TO-220-3

BDX53ATU Applications
There are a lot of Rochester Electronics, LLC
BDX53ATU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BDX53ATU More Descriptions

Bipolar (BJT) Transistor NPN - Darlington 60V 8A 60W Through Hole TO-220
Trans Darlington NPN 60V 8A 60000mW 3-Pin(3 Tab) TO-220 Rail
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Product Comparison

The three parts on the right have similar specifications to BDX53ATU.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Surface Mount

Number of Pins

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Number of Circuits

Element Configuration

Case Connection

Transistor Application

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Radiation Hardening

Lead Free

HTS Code

Terminal Position

JESD-30 Code

Qualification Status

Polarity/Channel Type

View Compare
BDX53ATU

Fairchild/ON Semiconductor

Through Hole

TO-220-3

TO-220-3

150°C TJ

Tube

Obsolete

1 (Unlimited)

60W

NPN - Darlington

750 @ 3A 3V

500μA

2V @ 12mA, 3A

60V

8A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BDX54C

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

2V @ 12mA, 3A

PNP - Darlington

TO-220

-

60W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

750 @ 3A, 3V

500µA

8A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BDX53ATU vs BDX54C
BDX53BG

ON Semiconductor

Through Hole

TO-220-3

-

-65°C~150°C TJ

Tube

Active

1 (Unlimited)

-

NPN - Darlington

750 @ 3A 3V

500μA

2V @ 12mA, 3A

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 5 days ago)

2 Weeks

NO

3

SILICON

2007

e3

yes

3

EAR99

Tin (Sn)

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

80V

65W

260

8A

40

BDX53

3

1

NPN

8

Single

COLLECTOR

AMPLIFIER

80V

8A

TO-220AB

80V

4MHz

2V

80V

5V

750

No

Lead Free

-

-

-

-

-

BDX53ATU vs BDX53BG
BDX54-S

Bourns Inc.

Through Hole

TO-220-3

-

-65°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

2W

PNP - Darlington

750 @ 3A 3V

500μA

2V @ 12mA, 3A

45V

8A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

-

SILICON

1993

e1

yes

3

EAR99

TIN SILVER COPPER

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

BDX54

3

1

-

-

-

COLLECTOR

SWITCHING

-

-

TO-220AB

-

-

-

-

-

-

-

-

8541.29.00.95

SINGLE

R-PSFM-T3

Not Qualified

PNP

BDX53ATU vs BDX54-S