ON Semiconductor BDX53C

Name: BDX53C
Brand: ON Semiconductor
SKU: 2472579-BDX53C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BDX53C

Manufacturer:: ON Semiconductor

Ventron No:: 2472579-BDX53C

Description:: TRANS NPN DARL 100V 8A TO-220AB

ECAD Model:

Datasheet:: BDX53,54/A/B/C TO220B03 Pkg Drawing

Specifications

ON Semiconductor BDX53C technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BDX53C.

Voltage - Collector Emitter Breakdown (Max):
100V
Vce Saturation (Max) @ Ib, Ic:
2V @ 12mA, 3A
Transistor Type:
NPN - Darlington
Supplier Device Package:
TO-220AB
Series:
-
Power - Max:
65W
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Frequency - Transition:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 3A, 3V
Current - Collector Cutoff (Max):
500µA
Current - Collector (Ic) (Max):
8A

Description

part#BDX53C, Manufacturer:AMI Semiconductor / ON Semiconductor is available at ventronchip.com, see description of BDX53C as below .use the request quote form to request BDX53C price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for BDX53C depending on the quantity required, availability and warehouse location.

BDX53C More Descriptions

Transistor: NPN; bipolar; 100V; 8A; 60W; -65 150 deg.C; THT; TO220
BDX53 Series 100 V 8 A NPN Complementary Power Darlington Transistor - TO-220
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 8A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Transistor Darlington NPN 8A/100V 60W TO220 BDX 53 C
Power Bipolar, NPN, 3V, 12mA, TO-220, TubeSTMicroelectronics SCT
100V 750@3V,3A NPN 8A 60W TO-220 Darlington Transistors ROHS
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:60W; DC Collector Current:8A; DC Current Gain hFE:750; Transistor Case Style:TO-220; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Av Current Ic:8A; Collector Emitter Voltage Vces:2V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Ptot Max:60W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:100V

Product Comparison

The three parts on the right have similar specifications to BDX53C.

Image

Part Number

Manufacturer

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Terminal Position

JESD-30 Code

Qualification Status

Power - Max

Polarity/Channel Type

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
BDX53C

ON Semiconductor

100V

2V @ 12mA, 3A

NPN - Darlington

TO-220AB

-

65W

Tube

TO-220-3

-65°C ~ 150°C (TJ)

Through Hole

-

750 @ 3A, 3V

500µA

8A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BDX54C

STMicroelectronics

100V

2V @ 12mA, 3A

PNP - Darlington

TO-220

-

60W

Tube

TO-220-3

150°C (TJ)

Through Hole

-

750 @ 3A, 3V

500µA

8A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BDX53C vs BDX54C
BDX53CG

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 3 days ago)

7 Weeks

Through Hole

TO-220-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

1999

e3

yes

Active

1 (Unlimited)

3

EAR99

Tin (Sn)

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

100V

65W

260

8A

40

BDX53

3

1

NPN

Single

40W

COLLECTOR

AMPLIFIER

NPN - Darlington

100V

8A

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

100V

20MHz

2V

100V

5V

750

4A

9.28mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

BDX53C vs BDX53CG
BDX54-S

Bourns Inc.

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-220-3

NO

-

-

SILICON

-65°C~150°C TJ

Tube

1993

e1

yes

Obsolete

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

-

-

-

-

NOT SPECIFIED

-

NOT SPECIFIED

BDX54

3

1

-

-

-

COLLECTOR

SWITCHING

PNP - Darlington

-

-

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

8541.29.00.95

SINGLE

R-PSFM-T3

Not Qualified

2W

PNP

45V

8A

BDX53C vs BDX54-S