STMicroelectronics BD535

Name: BD535
Brand: STMicroelectronics
SKU: 2464418-BD535
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD535

Manufacturer:: STMicroelectronics

Ventron No:: 2464418-BD535

Description:: TRANS NPN 60V 8A TO-220

ECAD Model:

Datasheet:: BD53x

Specifications

STMicroelectronics BD535 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD535.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
50W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
8A
Transition Frequency
12MHz
RoHS Status
Non-RoHS Compliant

Description

BD535 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 2A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 12MHz in the part.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BD535 Features
the DC current gain for this device is 25 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
a transition frequency of 12MHz

BD535 Applications
There are a lot of Rochester Electronics, LLC
BD535 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to BD535.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

RoHS Status

Supplier Device Package

Base Part Number

Frequency - Transition

Contact Plating

Mount

Number of Pins

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

REACH SVHC

Radiation Hardening

Lead Free

View Compare
BD535

STMicroelectronics

Through Hole

TO-220-3

NO

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

SINGLE

NOT APPLICABLE

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

50W

SWITCHING

NPN

NPN

25 @ 2A 2V

100μA

TO-220AB

800mV @ 600mA, 6A

60V

8A

12MHz

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD537J

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

150°C TJ

Bulk

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

50W

-

-

NPN

30 @ 2A 2V

100μA

-

800mV @ 200mA, 2A

80V

8A

-

-

TO-220-3

BD537

12MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD535 vs BD537J
BD533J

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

150°C TJ

Bulk

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

50W

-

-

NPN

30 @ 2A 2V

100μA

-

800mV @ 200mA, 2A

45V

8A

-

-

TO-220-3

BD533

12MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD535 vs BD533J
BD536

STMicroelectronics

Through Hole

TO-220-3

-

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

3

-

-

1

-

-

SWITCHING

PNP

PNP

25 @ 2A 2V

100μA

-

800mV @ 600mA, 6A

-

-

12MHz

ROHS3 Compliant

-

BD536

-

Tin

Through Hole

3

EAR99

Other Transistors

-60V

50W

-8A

Single

50W

12MHz

60V

8A

60V

800mV

60V

5V

20

0.8 V

No SVHC

No

Lead Free

BD535 vs BD536