STMicroelectronics BD533
- Part Number:
- BD533
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464537-BD533
- Description:
- TRANS NPN 45V 8A TO-220
- Datasheet:
- BD53x
STMicroelectronics BD533 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD533.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC45V
- Max Power Dissipation50W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating8A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBD533
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product12MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)800mV
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 2A 2V
- Current - Collector Cutoff (Max)100μA
- Vce Saturation (Max) @ Ib, Ic800mV @ 600mA, 6A
- Collector Emitter Breakdown Voltage45V
- Transition Frequency12MHz
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- hFE Min20
- VCEsat-Max0.8 V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD533 Overview
This device has a DC current gain of 25 @ 2A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.In this part, there is a transition frequency of 12MHz.The maximum collector current is 8A volts.
BD533 Features
the DC current gain for this device is 25 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 12MHz
BD533 Applications
There are a lot of STMicroelectronics
BD533 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 25 @ 2A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.In this part, there is a transition frequency of 12MHz.The maximum collector current is 8A volts.
BD533 Features
the DC current gain for this device is 25 @ 2A 2V
the vce saturation(Max) is 800mV @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 12MHz
BD533 Applications
There are a lot of STMicroelectronics
BD533 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to BD533.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxRoHS StatusLead FreeSupplier Device PackagePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionSurface MountPbfree CodeTerminal PositionConfigurationJEDEC-95 CodeContact PlatingNumber of PinsPower DissipationCollector Emitter Saturation VoltageREACH SVHCRadiation HardeningView Compare
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BD533Through HoleThrough HoleTO-220-3SILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors45V50WNOT SPECIFIEDnot_compliant8ANOT SPECIFIEDBD5333R-PSFM-T3Not Qualified1SingleSWITCHING12MHzNPNNPN800mV8A25 @ 2A 2V100μA800mV @ 600mA, 6A45V12MHz45V5V200.8 VROHS3 CompliantLead Free-----------------
-
-Through HoleTO-220-3-150°C TJBulk-Obsolete1 (Unlimited)----------BD534--------PNP--40 @ 2A 2V100μA800mV @ 600mA, 6A--------TO-220-350W45V8A12MHz-----------
-
-Through HoleTO-220-3SILICON150°C TJTubee3Obsolete1 (Unlimited)3-MATTE TIN---NOT APPLICABLE--NOT APPLICABLE-3R-PSFM-T3COMMERCIAL1-SWITCHING-NPNNPN--25 @ 2A 2V100μA800mV @ 600mA, 6A-12MHz----Non-RoHS Compliant--50W60V8A-NOyesSINGLESINGLETO-220AB------
-
Through HoleThrough HoleTO-220-3SILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99-Other Transistors-60V50W---8A-BD5363--1SingleSWITCHING12MHzPNPPNP60V8A25 @ 2A 2V100μA800mV @ 600mA, 6A60V12MHz60V5V200.8 VROHS3 CompliantLead Free------yes---Tin350W800mVNo SVHCNo
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