Fairchild/ON Semiconductor BCW30

Name: BCW30
Brand: Fairchild/ON Semiconductor
SKU: 3069257-BCW30
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCW30

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069257-BCW30

Description:: TRANS PNP 32V 0.5A SOT-23

ECAD Model:

Datasheet:: BCW30

Specifications

Fairchild/ON Semiconductor BCW30 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BCW30.

Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
215 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
500mA
RoHS Status
ROHS3 Compliant

Description

BCW30 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 215 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.Device displays Collector Emitter Breakdown (32V maximal voltage).

BCW30 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 300mV @ 500μA, 10mA

BCW30 Applications
There are a lot of Rochester Electronics, LLC
BCW30 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCW30 More Descriptions

Bipolar Transistors - BJT SOT-23 PNP GP AMP
Trans GP BJT PNP 32V 0.5A 3-Pin SOT-23 T/R
• This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. • Sourced from Process 68.

Product Comparison

The three parts on the right have similar specifications to BCW30.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Mount

Published

ECCN Code

HTS Code

Voltage - Rated DC

Current Rating

Operating Temperature (Max)

Max Collector Current

Collector Emitter Breakdown Voltage

Transition Frequency

VCEsat-Max

Collector-Base Capacitance-Max

Lead Free

Lifecycle Status

Factory Lead Time

Contact Plating

Number of Pins

Subcategory

Max Power Dissipation

Base Part Number

Pin Count

Element Configuration

Power Dissipation

Collector Emitter Voltage (VCEO)

Max Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Radiation Hardening

Frequency - Transition

View Compare
BCW30

Fairchild/ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

DUAL

GULL WING

260

NOT SPECIFIED

R-PDSO-G3

COMMERCIAL

1

SINGLE

350mW

SWITCHING

PNP

PNP

215 @ 2mA 5V

100nA ICBO

300mV @ 500μA, 10mA

32V

500mA

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BCW33T116

Rohm Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

SILICON

-

Tape & Reel (TR)

-

-

Active

1 (Unlimited)

3

-

DUAL

GULL WING

-

-

R-PDSO-G3

Not Qualified

1

SINGLE

-

AMPLIFIER

NPN

NPN

420 @ 2mA 5V

-

-

-

-

ROHS3 Compliant

Surface Mount

2016

EAR99

8541.21.00.75

32V

100mA

150°C

100mA

32V

300MHz

0.3 V

4pF

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BCW30 vs BCW33T116
BCW33LT3G

ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

3

-

DUAL

GULL WING

260

40

-

-

1

-

-

SWITCHING

NPN

NPN

420 @ 2mA 5V

100nA ICBO

250mV @ 500μA, 10mA

-

-

RoHS Compliant

-

2005

EAR99

-

32V

100mA

-

100mA

32V

-

-

-

Lead Free

ACTIVE (Last Updated: 19 hours ago)

2 Weeks

Tin

3

Other Transistors

225mW

BCW33

3

Single

300mW

32V

1MHz

250mV

32V

5V

420

1.11mm

3.04mm

2.64mm

No

-

BCW30 vs BCW33LT3G
BCW31

Fairchild/ON Semiconductor

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

DUAL

GULL WING

260

NOT SPECIFIED

R-PDSO-G3

COMMERCIAL

1

SINGLE

350mW

AMPLIFIER

NPN

NPN

110 @ 2mA 5V

100nA ICBO

250mV @ 500μA, 10mA

32V

500mA

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

200MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

200MHz

BCW30 vs BCW31