ON Semiconductor BCW33LT1G

Name: BCW33LT1G
Brand: ON Semiconductor
SKU: 2845265-BCW33LT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BCW33LT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2845265-BCW33LT1G

Description:: TRANS NPN 32V 0.1A SOT-23

ECAD Model:

Datasheet:: BCW33LT1G

Specifications

ON Semiconductor BCW33LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BCW33LT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BCW33
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
32V
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
32V
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
hFE Min
420
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BCW33LT1G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 500μA, 10mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BCW33LT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA

BCW33LT1G Applications
There are a lot of ON Semiconductor
BCW33LT1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BCW33LT1G More Descriptions

ON Semi BCW33LT1G NPN Bipolar Transistor, 0.1 A, 32 V, 3-Pin SOT-23 | ON Semiconductor BCW33LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
BCW Series 32 V 100 mA SMT NPN Silicon General Purpose Transistor - SOT-23
Trans GP BJT NPN 32V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:32V; Dc Collector Current:100Ma; Power Dissipation Pd:300Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:420Hfe Rohs Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to BCW33LT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

HTS Code

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Transition Frequency

VCEsat-Max

Collector-Base Capacitance-Max

Terminal Finish

Reach Compliance Code

Power - Max

JEDEC-95 Code

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
BCW33LT1G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

2 Weeks

Tin

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

32V

300mW

DUAL

GULL WING

260

100mA

40

BCW33

3

1

Single

300mW

SWITCHING

NPN

NPN

32V

100mA

420 @ 2mA 5V

100nA ICBO

250mV @ 500μA, 10mA

32V

250mV

32V

32V

5V

420

940μm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BCW33T116

Rohm Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-

Tape & Reel (TR)

2016

-

-

Active

1 (Unlimited)

3

EAR99

-

32V

-

DUAL

GULL WING

-

100mA

-

-

-

1

-

-

AMPLIFIER

NPN

NPN

-

100mA

420 @ 2mA 5V

-

-

32V

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

Surface Mount

8541.21.00.75

R-PDSO-G3

Not Qualified

150°C

SINGLE

300MHz

0.3 V

4pF

-

-

-

-

-

-

-

BCW33LT1G vs BCW33T116
BCW33LT1

ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

no

Obsolete

1 (Unlimited)

3

-

-

-

-

DUAL

GULL WING

240

-

30

-

3

1

-

-

SWITCHING

NPN

NPN

-

-

420 @ 2mA 5V

100nA ICBO

250mV @ 500μA, 10mA

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

R-PDSO-G3

COMMERCIAL

-

SINGLE

-

-

-

TIN LEAD

unknown

300mW

TO-236AB

32V

100mA

-

BCW33LT1G vs BCW33LT1
BCW31

Fairchild/ON Semiconductor

-

-

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

DUAL

GULL WING

260

-

NOT SPECIFIED

-

-

1

-

-

AMPLIFIER

NPN

NPN

-

-

110 @ 2mA 5V

100nA ICBO

250mV @ 500μA, 10mA

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

R-PDSO-G3

COMMERCIAL

-

SINGLE

200MHz

-

-

MATTE TIN

-

350mW

-

32V

500mA

200MHz

BCW33LT1G vs BCW31