AUIRGU4045D

Infineon Technologies AUIRGU4045D

Part Number:
AUIRGU4045D
Manufacturer:
Infineon Technologies
Ventron No:
2494869-AUIRGU4045D
Description:
DIODE 600V IGBT
ECAD Model:
Datasheet:
AUIRGU4045D

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Specifications
Infineon Technologies AUIRGU4045D technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRGU4045D.
  • Factory Lead Time
    13 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Rise Time-Max
    15ns
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Input Type
    Standard
  • Power - Max
    77W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    74ns
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    12A
  • Power Dissipation-Max (Abs)
    77W
  • Turn On Time
    38 ns
  • Test Condition
    400V, 6A, 47 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A
  • Turn Off Time-Nom (toff)
    127 ns
  • IGBT Type
    Trench
  • Gate Charge
    19.5nC
  • Current - Collector Pulsed (Icm)
    18A
  • Td (on/off) @ 25°C
    27ns/75ns
  • Switching Energy
    56μJ (on), 122μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    22ns
  • RoHS Status
    RoHS Compliant
Description
AUIRGU4045D Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE

AUIRGU4045D Features
?Low-voltage on-trench IGBT technology
? Minimal Switching Losses
?175 °C is the maximum junction temperature.
?SCSOA 5 ps
?Round RBSOA
?All components examined for 1 were 100%
?VCE (on) Temperature Coefficient in the positive.
?Co-pak Diode with Ultra Fast Soft Recovery
?Tighter Parameter Distribution
?RoHS and lead-free compliant
?Auto Qualification

AUIRGU4045D Applications
Switching applications
AUIRGU4045D More Descriptions
600V Low VCEon IGBT with UltraFast Soft Recovery Diode in a I-Pak package, IPAKCOPAK-3, RoHSInfineon SCT
9pF ±0.5pF 50V C0G, NP0 Ceramic Capacitor -55°C ~ 125°C Surface Mount, MLCC 0402 (1005 Metric) 0.039" L x 0.020" W (1.00mm x 0.50mm)
Benefits: Low Vce(ON); Optimized for motor drive applications; 5us SCSOA at 25C; 175C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump; Piezo Injection; PTC Heater
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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