Infineon Technologies AUIRGU4045D
- Part Number:
- AUIRGU4045D
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2494869-AUIRGU4045D
- Description:
- DIODE 600V IGBT
- Datasheet:
- AUIRGU4045D
Infineon Technologies AUIRGU4045D technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRGU4045D.
- Factory Lead Time13 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryInsulated Gate BIP Transistors
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Rise Time-Max15ns
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Input TypeStandard
- Power - Max77W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time74ns
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)12A
- Power Dissipation-Max (Abs)77W
- Turn On Time38 ns
- Test Condition400V, 6A, 47 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 6A
- Turn Off Time-Nom (toff)127 ns
- IGBT TypeTrench
- Gate Charge19.5nC
- Current - Collector Pulsed (Icm)18A
- Td (on/off) @ 25°C27ns/75ns
- Switching Energy56μJ (on), 122μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)22ns
- RoHS StatusRoHS Compliant
AUIRGU4045D Description
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
AUIRGU4045D Features
?Low-voltage on-trench IGBT technology
? Minimal Switching Losses
?175 °C is the maximum junction temperature.
?SCSOA 5 ps
?Round RBSOA
?All components examined for 1 were 100%
?VCE (on) Temperature Coefficient in the positive.
?Co-pak Diode with Ultra Fast Soft Recovery
?Tighter Parameter Distribution
?RoHS and lead-free compliant
?Auto Qualification
AUIRGU4045D Applications
Switching applications
BIPOLAR TRANSISTOR WITH INSULATED GATE AND ULTRAFAST SOFT RECOVERY DIODE
AUIRGU4045D Features
?Low-voltage on-trench IGBT technology
? Minimal Switching Losses
?175 °C is the maximum junction temperature.
?SCSOA 5 ps
?Round RBSOA
?All components examined for 1 were 100%
?VCE (on) Temperature Coefficient in the positive.
?Co-pak Diode with Ultra Fast Soft Recovery
?Tighter Parameter Distribution
?RoHS and lead-free compliant
?Auto Qualification
AUIRGU4045D Applications
Switching applications
AUIRGU4045D More Descriptions
600V Low VCEon IGBT with UltraFast Soft Recovery Diode in a I-Pak package, IPAKCOPAK-3, RoHSInfineon SCT
9pF ±0.5pF 50V C0G, NP0 Ceramic Capacitor -55°C ~ 125°C Surface Mount, MLCC 0402 (1005 Metric) 0.039" L x 0.020" W (1.00mm x 0.50mm)
Benefits: Low Vce(ON); Optimized for motor drive applications; 5us SCSOA at 25C; 175C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump; Piezo Injection; PTC Heater
9pF ±0.5pF 50V C0G, NP0 Ceramic Capacitor -55°C ~ 125°C Surface Mount, MLCC 0402 (1005 Metric) 0.039" L x 0.020" W (1.00mm x 0.50mm)
Benefits: Low Vce(ON); Optimized for motor drive applications; 5us SCSOA at 25C; 175C operating temperature; AEC-Q101 qualified; Lead-free, RoHS compliant | Target Applications: HVAC Compressor; Oil Pump; Piezo Injection; PTC Heater
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