AUIRFSL8403

Infineon Technologies AUIRFSL8403

Part Number:
AUIRFSL8403
Manufacturer:
Infineon Technologies
Ventron No:
3586655-AUIRFSL8403
Description:
MOSFET N-CH 40V 123A TO262
ECAD Model:
Datasheet:
AUIRFSL8403

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Specifications
Infineon Technologies AUIRFSL8403 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFSL8403.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Supplier Device Package
    TO-262
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    99W Tc
  • Element Configuration
    Single
  • Power Dissipation
    99W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.3mOhm @ 70A, 10V
  • Vgs(th) (Max) @ Id
    3.9V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3183pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    123A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    93nC @ 10V
  • Rise Time
    77ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    43 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    123A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    3.183nF
  • Drain to Source Resistance
    3.3mOhm
  • Rds On Max
    3.3 mΩ
  • Nominal Vgs
    3 V
  • Height
    9.65mm
  • Length
    10.67mm
  • Width
    4.83mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
AUIRFSL8403 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3183pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 123A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3.3mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

AUIRFSL8403 Features
a continuous drain current (ID) of 123A
the turn-off delay time is 26 ns
single MOSFETs transistor is 3.3mOhm
a 40V drain to source voltage (Vdss)


AUIRFSL8403 Applications
There are a lot of Infineon Technologies
AUIRFSL8403 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
AUIRFSL8403 More Descriptions
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 40V 123A Automotive 3-Pin(3 Tab) TO-262 Tube
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
MOSFET, 40V, 120A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:123A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Product Comparison
The three parts on the right have similar specifications to AUIRFSL8403.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    ECCN Code
    Subcategory
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Contact Plating
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Additional Feature
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Operating Mode
    Case Connection
    Transistor Application
    Drain-source On Resistance-Max
    Surface Mount
    Configuration
    Drain Current-Max (Abs) (ID)
    View Compare
  • AUIRFSL8403
    AUIRFSL8403
    16 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    TO-262
    -55°C~175°C TJ
    Tube
    HEXFET®
    2013
    Active
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    99W Tc
    Single
    99W
    10 ns
    N-Channel
    3.3mOhm @ 70A, 10V
    3.9V @ 100μA
    3183pF @ 25V
    123A Tc
    93nC @ 10V
    77ns
    40V
    10V
    ±20V
    43 ns
    26 ns
    123A
    20V
    3.183nF
    3.3mOhm
    3.3 mΩ
    3 V
    9.65mm
    10.67mm
    4.83mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • AUIRF3315S
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    3.8W Ta 94W Tc
    Single
    3.8W
    9.6 ns
    N-Channel
    82m Ω @ 12A, 10V
    4V @ 250μA
    1300pF @ 25V
    21A Tc
    95nC @ 10V
    32ns
    -
    10V
    ±20V
    38 ns
    49 ns
    21A
    20V
    -
    -
    -
    -
    4.83mm
    10.67mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    -
    EAR99
    FET General Purpose Power
    2V
    150V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • AUIRF540ZS
    13 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2010
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    92W Tc
    Single
    92W
    15 ns
    N-Channel
    26.5m Ω @ 22A, 10V
    4V @ 250μA
    1770pF @ 25V
    36A Tc
    63nC @ 10V
    51ns
    -
    10V
    ±20V
    39 ns
    43 ns
    36A
    20V
    -
    -
    -
    2 V
    4.83mm
    10.67mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    -
    EAR99
    FET General Purpose Power
    2V
    100V
    Tin
    SILICON
    e3
    2
    AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
    GULL WING
    260
    30
    R-PSSO-G2
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.0265Ohm
    -
    -
    -
  • AUIRF3315STRL
    9 Weeks
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 94W Tc
    -
    -
    -
    N-Channel
    82m Ω @ 12A, 10V
    4V @ 250μA
    1300pF @ 25V
    21A Tc
    95nC @ 10V
    -
    150V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    EAR99
    FET General Purpose Power
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    YES
    Single
    21A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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