Infineon Technologies AUIRFSL8403
- Part Number:
- AUIRFSL8403
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586655-AUIRFSL8403
- Description:
- MOSFET N-CH 40V 123A TO262
- Datasheet:
- AUIRFSL8403
Infineon Technologies AUIRFSL8403 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFSL8403.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Supplier Device PackageTO-262
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max99W Tc
- Element ConfigurationSingle
- Power Dissipation99W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.3mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id3.9V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds3183pF @ 25V
- Current - Continuous Drain (Id) @ 25°C123A Tc
- Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
- Rise Time77ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)43 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)123A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance3.183nF
- Drain to Source Resistance3.3mOhm
- Rds On Max3.3 mΩ
- Nominal Vgs3 V
- Height9.65mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AUIRFSL8403 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3183pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 123A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3.3mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
AUIRFSL8403 Features
a continuous drain current (ID) of 123A
the turn-off delay time is 26 ns
single MOSFETs transistor is 3.3mOhm
a 40V drain to source voltage (Vdss)
AUIRFSL8403 Applications
There are a lot of Infineon Technologies
AUIRFSL8403 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3183pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 123A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3.3mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
AUIRFSL8403 Features
a continuous drain current (ID) of 123A
the turn-off delay time is 26 ns
single MOSFETs transistor is 3.3mOhm
a 40V drain to source voltage (Vdss)
AUIRFSL8403 Applications
There are a lot of Infineon Technologies
AUIRFSL8403 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
AUIRFSL8403 More Descriptions
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 40V 123A Automotive 3-Pin(3 Tab) TO-262 Tube
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
MOSFET, 40V, 120A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:123A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
Trans MOSFET N-CH Si 40V 123A Automotive 3-Pin(3 Tab) TO-262 Tube
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; Electric Power Steering; Relay Replacement
MOSFET, 40V, 120A, Q101, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:123A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
The three parts on the right have similar specifications to AUIRFSL8403.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeECCN CodeSubcategoryThreshold VoltageDrain to Source Breakdown VoltageContact PlatingTransistor Element MaterialJESD-609 CodeNumber of TerminationsAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxSurface MountConfigurationDrain Current-Max (Abs) (ID)View Compare
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AUIRFSL840316 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3TO-262-55°C~175°C TJTubeHEXFET®2013Active1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1199W TcSingle99W10 nsN-Channel3.3mOhm @ 70A, 10V3.9V @ 100μA3183pF @ 25V123A Tc93nC @ 10V77ns40V10V±20V43 ns26 ns123A20V3.183nF3.3mOhm3.3 mΩ3 V9.65mm10.67mm4.83mmNo SVHCNoROHS3 CompliantLead Free---------------------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2010Obsolete1 (Unlimited)--MOSFET (Metal Oxide)1-3.8W Ta 94W TcSingle3.8W9.6 nsN-Channel82m Ω @ 12A, 10V4V @ 250μA1300pF @ 25V21A Tc95nC @ 10V32ns-10V±20V38 ns49 ns21A20V----4.83mm10.67mm9.65mmNo SVHCNoROHS3 Compliant-EAR99FET General Purpose Power2V150V----------------
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13 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2010Discontinued1 (Unlimited)--MOSFET (Metal Oxide)1-92W TcSingle92W15 nsN-Channel26.5m Ω @ 22A, 10V4V @ 250μA1770pF @ 25V36A Tc63nC @ 10V51ns-10V±20V39 ns43 ns36A20V---2 V4.83mm10.67mm9.65mmNo SVHCNoROHS3 Compliant-EAR99FET General Purpose Power2V100VTinSILICONe32AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITYGULL WING26030R-PSSO-G2ENHANCEMENT MODEDRAINSWITCHING0.0265Ohm---
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9 Weeks-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2010Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--3.8W Ta 94W Tc---N-Channel82m Ω @ 12A, 10V4V @ 250μA1300pF @ 25V21A Tc95nC @ 10V-150V10V±20V-------------ROHS3 Compliant-EAR99FET General Purpose Power--------NOT SPECIFIEDNOT SPECIFIED-----YESSingle21A
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