Infineon Technologies AUIRFR6215TRL

Name: AUIRFR6215TRL
Brand: Infineon Technologies
SKU: 2488997-AUIRFR6215TRL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRFR6215TRL

Manufacturer:: Infineon Technologies

Ventron No:: 2488997-AUIRFR6215TRL

Description:: MOSFET P-CH 150V 13A DPAK

ECAD Model:

Datasheet:: AUIRFR6215TRL

Specifications

Infineon Technologies AUIRFR6215TRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFR6215TRL.

Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
295m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
66nC @ 10V
Rise Time
36ns
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
37 ns
Turn-Off Delay Time
53 ns
Continuous Drain Current (ID)
-13A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.295Ohm
Drain to Source Breakdown Voltage
-150V
Pulsed Drain Current-Max (IDM)
44A
Max Junction Temperature (Tj)
175°C
Height
2.52mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

AUIRFR6215TRL Description
AUIRFR6215TRL is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area utilizing the latest processing techniques. Fast switching speed and ruggedized device design can also be delivered. All these features enable this device to be well suited for automotive and other applications.

AUIRFR6215TRL Features
Low on-resistance per silicon area
Latest processing techniques
Fast switching speed
Ruggedized device design
Available in the D-Pak package

AUIRFR6215TRL Applications
Automotive applications

AUIRFR6215TRL More Descriptions

Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHSInfineon SCT
AUIRFR6215TRL Infineon Technologies AG Transistors MOSFETs P-CH Si 150V 13A Automotive 3-Pin(2 Tab) DPAK T/R Si - Arrow.com
MOSFET, AEC-Q101, P-CH, -150V, -13A; Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Source Voltage Vds:-150V; On Resistance
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,P CH,150V,13A,DPAK; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.295ohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:-20V; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Power Dissipation Pd:110W

Product Comparison

The three parts on the right have similar specifications to AUIRFR6215TRL.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Finish

Avalanche Energy Rating (Eas)

Threshold Voltage

Drain Current-Max (Abs) (ID)

Surface Mount

Configuration

View Compare
AUIRFR6215TRL

Infineon Technologies

16 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2011

e3

Active

1 (Unlimited)

2

EAR99

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

14 ns

P-Channel

SWITCHING

295m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

36ns

150V

10V

±20V

37 ns

53 ns

-13A

TO-252AA

20V

0.295Ohm

-150V

44A

175°C

2.52mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
AUIRF1018ES

Infineon Technologies

-

Lead, Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2011

e3

Discontinued

1 (Unlimited)

2

EAR99

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

-

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

13 ns

N-Channel

SWITCHING

8.4m Ω @ 47A, 10V

4V @ 100μA

2290pF @ 50V

79A Tc

69nC @ 10V

35ns

-

10V

±20V

46 ns

55 ns

79A

-

20V

0.0084Ohm

60V

-

-

4.83mm

10.67mm

9.65mm

No SVHC

No

ROHS3 Compliant

-

Matte Tin (Sn) - with Nickel (Ni) barrier

88 mJ

-

-

-

-

AUIRFR6215TRL vs AUIRF1018ES
AUIRF3205ZS

Infineon Technologies

16 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2010

e3

Discontinued

1 (Unlimited)

2

EAR99

AVALANCHE RATED, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

-

170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

18 ns

N-Channel

SWITCHING

6.5m Ω @ 66A, 10V

4V @ 250μA

3450pF @ 25V

75A Tc

110nC @ 10V

95ns

-

10V

±20V

67 ns

45 ns

110A

-

20V

0.0065Ohm

55V

440A

-

4.83mm

10.67mm

11.3mm

No SVHC

No

ROHS3 Compliant

-

-

250 mJ

2V

75A

-

-

AUIRFR6215TRL vs AUIRF3205ZS
AUIRF3315STRL

Infineon Technologies

9 Weeks

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2010

-

Obsolete

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

3.8W Ta 94W Tc

-

-

-

-

-

N-Channel

-

82m Ω @ 12A, 10V

4V @ 250μA

1300pF @ 25V

21A Tc

95nC @ 10V

-

150V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

21A

YES

Single

AUIRFR6215TRL vs AUIRF3315STRL