Infineon Technologies AUIRFR540Z
- Part Number:
- AUIRFR540Z
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849164-AUIRFR540Z
- Description:
- MOSFET N CH 100V 35A DPAK
- Datasheet:
- AUIRFR540Z
Infineon Technologies AUIRFR540Z technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFR540Z.
- Factory Lead Time26 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- ConfigurationSingle
- Power Dissipation-Max91W Tc
- Power Dissipation91W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs28.5m Ω @ 21A, 10V
- Vgs(th) (Max) @ Id4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds1690pF @ 25V
- Current - Continuous Drain (Id) @ 25°C35A Tc
- Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
- Rise Time42ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)34 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)35A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
AUIRFR540Z Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1690pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRFR540Z Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V
AUIRFR540Z Applications
There are a lot of Infineon Technologies
AUIRFR540Z applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1690pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRFR540Z Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V
AUIRFR540Z Applications
There are a lot of Infineon Technologies
AUIRFR540Z applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
AUIRFR540Z More Descriptions
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, AEC-Q101, N-CH, 100V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0225ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, AEC-Q101, N-CH, 100V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0225ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
The three parts on the right have similar specifications to AUIRFR540Z.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyNumber of ElementsConfigurationPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)HeightLengthWidthDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)View Compare
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AUIRFR540Z26 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633-55°C~175°C TJTubeHEXFET®2013Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)1Single91W Tc91W14 nsN-Channel28.5m Ω @ 21A, 10V4V @ 50μA1690pF @ 25V35A Tc59nC @ 10V42ns10V±20V34 ns43 ns35A4V20V100VNo SVHCNoROHS3 CompliantLead Free----------------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTubeHEXFET®2011Discontinued1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)1-110W Tc110W13 nsN-Channel8.4m Ω @ 47A, 10V4V @ 100μA2290pF @ 50V79A Tc69nC @ 10V35ns10V±20V46 ns55 ns79A-20V60VNo SVHCNoROHS3 Compliant-Lead, TinSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITYGULL WING26030R-PSSO-G2SingleENHANCEMENT MODEDRAINSWITCHING0.0084Ohm88 mJ4.83mm10.67mm9.65mm--
-
16 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTubeHEXFET®2010Discontinued1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)1-170W Tc170W18 nsN-Channel6.5m Ω @ 66A, 10V4V @ 250μA3450pF @ 25V75A Tc110nC @ 10V95ns10V±20V67 ns45 ns110A2V20V55VNo SVHCNoROHS3 Compliant-TinSILICONe32-AVALANCHE RATED, ULTRA-LOW RESISTANCEGULL WING26030R-PSSO-G2SingleENHANCEMENT MODEDRAINSWITCHING0.0065Ohm250 mJ4.83mm10.67mm11.3mm75A440A
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16 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)HEXFET®2003Active1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)1-92W Tc92W15 nsN-Channel26.5m Ω @ 22A, 10V4V @ 250μA1770pF @ 25V36A Tc63nC @ 10V51ns10V±20V39 ns43 ns36A-20V100V-NoROHS3 CompliantLead Free-SILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITYGULL WING26030R-PSSO-G2SingleENHANCEMENT MODEDRAINSWITCHING0.0265Ohm-----140A
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