AUIRFR540Z

Infineon Technologies AUIRFR540Z

Part Number:
AUIRFR540Z
Manufacturer:
Infineon Technologies
Ventron No:
2849164-AUIRFR540Z
Description:
MOSFET N CH 100V 35A DPAK
ECAD Model:
Datasheet:
AUIRFR540Z

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Specifications
Infineon Technologies AUIRFR540Z technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRFR540Z.
  • Factory Lead Time
    26 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Configuration
    Single
  • Power Dissipation-Max
    91W Tc
  • Power Dissipation
    91W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    28.5m Ω @ 21A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1690pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    59nC @ 10V
  • Rise Time
    42ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    34 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    35A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
AUIRFR540Z Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1690pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).

AUIRFR540Z Features
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
a threshold voltage of 4V


AUIRFR540Z Applications
There are a lot of Infineon Technologies
AUIRFR540Z applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
AUIRFR540Z More Descriptions
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET, AEC-Q101, N-CH, 100V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0225ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Product Comparison
The three parts on the right have similar specifications to AUIRFR540Z.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Technology
    Number of Elements
    Configuration
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    View Compare
  • AUIRFR540Z
    AUIRFR540Z
    26 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2013
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    Single
    91W Tc
    91W
    14 ns
    N-Channel
    28.5m Ω @ 21A, 10V
    4V @ 50μA
    1690pF @ 25V
    35A Tc
    59nC @ 10V
    42ns
    10V
    ±20V
    34 ns
    43 ns
    35A
    4V
    20V
    100V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • AUIRF1018ES
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2011
    Discontinued
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    -
    110W Tc
    110W
    13 ns
    N-Channel
    8.4m Ω @ 47A, 10V
    4V @ 100μA
    2290pF @ 50V
    79A Tc
    69nC @ 10V
    35ns
    10V
    ±20V
    46 ns
    55 ns
    79A
    -
    20V
    60V
    No SVHC
    No
    ROHS3 Compliant
    -
    Lead, Tin
    SILICON
    e3
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
    GULL WING
    260
    30
    R-PSSO-G2
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.0084Ohm
    88 mJ
    4.83mm
    10.67mm
    9.65mm
    -
    -
  • AUIRF3205ZS
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Tube
    HEXFET®
    2010
    Discontinued
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    -
    170W Tc
    170W
    18 ns
    N-Channel
    6.5m Ω @ 66A, 10V
    4V @ 250μA
    3450pF @ 25V
    75A Tc
    110nC @ 10V
    95ns
    10V
    ±20V
    67 ns
    45 ns
    110A
    2V
    20V
    55V
    No SVHC
    No
    ROHS3 Compliant
    -
    Tin
    SILICON
    e3
    2
    -
    AVALANCHE RATED, ULTRA-LOW RESISTANCE
    GULL WING
    260
    30
    R-PSSO-G2
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.0065Ohm
    250 mJ
    4.83mm
    10.67mm
    11.3mm
    75A
    440A
  • AUIRF540ZSTRL
    16 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2003
    Active
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    -
    92W Tc
    92W
    15 ns
    N-Channel
    26.5m Ω @ 22A, 10V
    4V @ 250μA
    1770pF @ 25V
    36A Tc
    63nC @ 10V
    51ns
    10V
    ±20V
    39 ns
    43 ns
    36A
    -
    20V
    100V
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    e3
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
    GULL WING
    260
    30
    R-PSSO-G2
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.0265Ohm
    -
    -
    -
    -
    -
    140A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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