Infineon Technologies AUIRF3805

Name: AUIRF3805
Brand: Infineon Technologies
SKU: 3813734-AUIRF3805
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AUIRF3805

Manufacturer:: Infineon Technologies

Ventron No:: 3813734-AUIRF3805

Description:: MOSFET N-CH 55V 160A TO220AB

ECAD Model:

Datasheet:: AUIRF3805

Specifications

Infineon Technologies AUIRF3805 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies AUIRF3805.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.3MOhm
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
300W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Case Connection
DRAIN
Turn On Delay Time
150 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7960pF @ 25V
Current - Continuous Drain (Id) @ 25°C
160A Tc
Gate Charge (Qg) (Max) @ Vgs
290nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
87 ns
Turn-Off Delay Time
93 ns
Continuous Drain Current (ID)
160A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
890A
Avalanche Energy Rating (Eas)
940 mJ
Height
16.51mm
Length
10.66mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

AUIRF3805 Description
This HEXFET? Power MOSFET is specifically intended for Automotive applications and uses the newest processing techniques to provide incredibly low on-resistance per silicon area. A 175°C junction working temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device for use in Automotive and a wide range of other applications.

AUIRF3805 Features
Advanced Process Technology
Ultra-Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *

AUIRF3805 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

AUIRF3805 More Descriptions

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 210A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
Single N-Channel 55 V 3.3 mOhm 290 nC Automotive HEXFET® Power Mosfet - TO-220-3
MOSFET N-Channel 55V 210A HEXFET TO220AB
Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,55V,160A,TO220AB; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-2220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to AUIRF3805.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

JESD-609 Code

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Drain-source On Resistance-Max

JESD-30 Code

Nominal Vgs

View Compare
AUIRF3805

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2010

Active

1 (Unlimited)

3

EAR99

3.3MOhm

AVALANCHE RATED, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

150 ns

N-Channel

SWITCHING

3.3m Ω @ 75A, 10V

4V @ 250μA

7960pF @ 25V

160A Tc

290nC @ 10V

20ns

10V

±20V

87 ns

93 ns

160A

2V

TO-220AB

20V

55V

890A

940 mJ

16.51mm

10.66mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
AUIRF1405ZS

Infineon Technologies

16 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

2

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2006

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

18 ns

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

150A Tc

180nC @ 10V

110ns

10V

±20V

82 ns

48 ns

150A

2V

-

20V

55V

600A

-

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

-

Tin

e3

GULL WING

260

30

0.0049Ohm

-

-

AUIRF3805 vs AUIRF1405ZS
AUIRF3315S

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

HEXFET®

2010

Obsolete

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

1

3.8W Ta 94W Tc

Single

-

3.8W

-

9.6 ns

N-Channel

-

82m Ω @ 12A, 10V

4V @ 250μA

1300pF @ 25V

21A Tc

95nC @ 10V

32ns

10V

±20V

38 ns

49 ns

21A

2V

-

20V

150V

-

-

4.83mm

10.67mm

9.65mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

AUIRF3805 vs AUIRF3315S
AUIRF540ZS

Infineon Technologies

13 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2010

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

1

92W Tc

Single

ENHANCEMENT MODE

92W

DRAIN

15 ns

N-Channel

SWITCHING

26.5m Ω @ 22A, 10V

4V @ 250μA

1770pF @ 25V

36A Tc

63nC @ 10V

51ns

10V

±20V

39 ns

43 ns

36A

2V

-

20V

100V

-

-

4.83mm

10.67mm

9.65mm

No SVHC

No

ROHS3 Compliant

-

Tin

e3

GULL WING

260

30

0.0265Ohm

R-PSSO-G2

2 V

AUIRF3805 vs AUIRF540ZS