Microsemi Corporation APT84M50B2
- Part Number:
- APT84M50B2
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2485088-APT84M50B2
- Description:
- MOSFET N-CH 500V 84A T-MAX
- Datasheet:
- APT84M50B2
Microsemi Corporation APT84M50B2 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT84M50B2.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3 Variant
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishPURE MATTE TIN
- Additional FeatureFAST SWITCHING, AVALANCHE RATED
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Current Rating84A
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1135W Tc
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time60 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs65m Ω @ 42A, 10V
- Vgs(th) (Max) @ Id5V @ 2.5mA
- Input Capacitance (Ciss) (Max) @ Vds13500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C84A Tc
- Gate Charge (Qg) (Max) @ Vgs340nC @ 10V
- Rise Time70ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time155 ns
- Continuous Drain Current (ID)84A
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.065Ohm
- Pulsed Drain Current-Max (IDM)270A
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT84M50B2 Overview
The maximum input capacitance of this device is 13500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 84A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 155 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 270A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 60 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT84M50B2 Features
a continuous drain current (ID) of 84A
the turn-off delay time is 155 ns
based on its rated peak drain current 270A.
APT84M50B2 Applications
There are a lot of Microsemi Corporation
APT84M50B2 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 13500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 84A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 155 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 270A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 60 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT84M50B2 Features
a continuous drain current (ID) of 84A
the turn-off delay time is 155 ns
based on its rated peak drain current 270A.
APT84M50B2 Applications
There are a lot of Microsemi Corporation
APT84M50B2 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
APT84M50B2 More Descriptions
Mosfet Mos8 500 V 84 A To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT84M50B2
Trans MOSFET N-CH Si 500V 84A 3-Pin(3 Tab) T-MAX
Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
500V, 84A, 0.065 OHM, T-MAX PKG
Trans MOSFET N-CH Si 500V 84A 3-Pin(3 Tab) T-MAX
Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
500V, 84A, 0.065 OHM, T-MAX PKG
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