APT84M50B2

Microsemi Corporation APT84M50B2

Part Number:
APT84M50B2
Manufacturer:
Microsemi Corporation
Ventron No:
2485088-APT84M50B2
Description:
MOSFET N-CH 500V 84A T-MAX
ECAD Model:
Datasheet:
APT84M50B2

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Specifications
Microsemi Corporation APT84M50B2 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT84M50B2.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    22 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    PURE MATTE TIN
  • Additional Feature
    FAST SWITCHING, AVALANCHE RATED
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Current Rating
    84A
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1135W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    60 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    65m Ω @ 42A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 2.5mA
  • Input Capacitance (Ciss) (Max) @ Vds
    13500pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    84A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    340nC @ 10V
  • Rise Time
    70ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    50 ns
  • Turn-Off Delay Time
    155 ns
  • Continuous Drain Current (ID)
    84A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.065Ohm
  • Pulsed Drain Current-Max (IDM)
    270A
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT84M50B2 Overview
The maximum input capacitance of this device is 13500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 84A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 155 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 270A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 60 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

APT84M50B2 Features
a continuous drain current (ID) of 84A
the turn-off delay time is 155 ns
based on its rated peak drain current 270A.


APT84M50B2 Applications
There are a lot of Microsemi Corporation
APT84M50B2 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
APT84M50B2 More Descriptions
Mosfet Mos8 500 V 84 A To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT84M50B2
Trans MOSFET N-CH Si 500V 84A 3-Pin(3 Tab) T-MAX
Power Field-Effect Transistor, 84A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
500V, 84A, 0.065 OHM, T-MAX PKG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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