Microsemi Corporation APT8075BN

Name: APT8075BN
Brand: Microsemi Corporation
SKU: 2492377-APT8075BN
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT8075BN

Manufacturer:: Microsemi Corporation

Ventron No:: 2492377-APT8075BN

Description:: MOSFET N-CH 800V 13A TO247AD

ECAD Model:

Datasheet:: APT8075BN, APT8090BN

Specifications

Microsemi Corporation APT8075BN technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT8075BN.

Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
POWER MOS IV®
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
310W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
750m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
JEDEC-95 Code
TO-247AD
Drain Current-Max (Abs) (ID)
13A
Drain-source On Resistance-Max
0.75Ohm
Pulsed Drain Current-Max (IDM)
56A
DS Breakdown Voltage-Min
800V
RoHS Status
Non-RoHS Compliant

Description

APT8075BN Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2950pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 13A.Peak drain current is 56A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

APT8075BN Features
based on its rated peak drain current 56A.
a 800V drain to source voltage (Vdss)

APT8075BN Applications
There are a lot of Microsemi Corporation
APT8075BN applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

APT8075BN More Descriptions

French Electronic Distributor since 1988
Power Field-Effect Transistor, 13A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
MOSFET N-CH 800V 13A TO247AD

Certification