Microsemi Corporation APT5020BNFR

Name: APT5020BNFR
Brand: Microsemi Corporation
SKU: 3586848-APT5020BNFR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT5020BNFR

Manufacturer:: Microsemi Corporation

Ventron No:: 3586848-APT5020BNFR

Description:: MOSFET N-CH 500V 28A TO247AD

ECAD Model:

Datasheet:: APT5020BNFR

Specifications

Microsemi Corporation APT5020BNFR technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT5020BNFR.

Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
POWER MOS IV®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
360W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
200mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C
28A Tc
Gate Charge (Qg) (Max) @ Vgs
210nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

APT5020BNFR Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3500pF @ 25V maximal input capacitance.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

APT5020BNFR Features
a 500V drain to source voltage (Vdss)

APT5020BNFR Applications
There are a lot of Microsemi Corporation
APT5020BNFR applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

APT5020BNFR More Descriptions

OEMs, CMs ONLY (NO BROKERS)
MOSFET N-CH 500V 28A TO247AD
MICROSEMI TO-247

Product Comparison

The three parts on the right have similar specifications to APT5020BNFR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Lifecycle Status

Mount

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated DC

Terminal Position

Current Rating

Pin Count

JESD-30 Code

Number of Elements

Configuration

Operating Mode

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Additional Feature

Subcategory

Power Dissipation

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

Number of Pins

Weight

Terminal Form

Number of Channels

Element Configuration

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

View Compare
APT5020BNFR

Microsemi Corporation

Through Hole

TO-247-3

TO-247AD

-55°C~150°C TJ

Tube

POWER MOS IV®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

360W Tc

N-Channel

200mOhm @ 14A, 10V

4V @ 1mA

3500pF @ 25V

28A Tc

210nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APT5016BLLG

Microsemi Corporation

Through Hole

TO-247-3

-

-55°C~150°C TJ

Tube

POWER MOS 7®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

329W Tc

N-Channel

160m Ω @ 15A, 10V

5V @ 1mA

2833pF @ 25V

30A Tc

72nC @ 10V

-

10V

±30V

IN PRODUCTION (Last Updated: 4 weeks ago)

Through Hole

SILICON

1997

e1

yes

3

EAR99

TIN SILVER COPPER

500V

SINGLE

30A

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

10 ns

SWITCHING

10ns

14 ns

27 ns

30A

TO-247AD

30V

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

APT5020BNFR vs APT5016BLLG
APT56F60L

Microsemi Corporation

Through Hole

TO-264-3, TO-264AA

-

-55°C~150°C TJ

Tube

POWER MOS 8™

Active

1 (Unlimited)

MOSFET (Metal Oxide)

1040W Tc

N-Channel

110m Ω @ 28A, 10V

5V @ 2.5mA

11300pF @ 25V

60A Tc

280nC @ 10V

600V

10V

±30V

IN PRODUCTION (Last Updated: 3 weeks ago)

Through Hole

SILICON

1997

e3

yes

3

-

PURE MATTE TIN

-

SINGLE

-

3

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

65 ns

SWITCHING

75ns

60 ns

190 ns

60A

-

30V

No

RoHS Compliant

-

23 Weeks

FAST SWITCHING, AVALANCHE RATED

FET General Purpose Power

1.04kW

56A

600V

-

-

-

-

-

-

-

-

-

-

-

APT5020BNFR vs APT56F60L
APT51M50J

Microsemi Corporation

Chassis Mount

SOT-227-4, miniBLOC

-

-55°C~150°C TJ

Tube

-

Active

1 (Unlimited)

MOSFET (Metal Oxide)

480W Tc

N-Channel

75m Ω @ 37A, 10V

5V @ 2.5mA

11600pF @ 25V

51A Tc

290nC @ 10V

-

10V

±30V

IN PRODUCTION (Last Updated: 1 month ago)

Chassis Mount, Screw

SILICON

1997

-

yes

4

-

-

500V

UPPER

51A

4

-

1

-

ENHANCEMENT MODE

ISOLATED

45 ns

SWITCHING

55ns

39 ns

120 ns

51A

-

30V

No

RoHS Compliant

Lead Free

19 Weeks

AVALANCHE RATED, UL RECOGNIZED

-

480W

-

-

4

30.000004g

UNSPECIFIED

1

Single

0.075Ohm

500V

230A

9.6mm

38.2mm

25.4mm

APT5020BNFR vs APT51M50J