Microsemi Corporation APT45GP120B2DQ2G
- Part Number:
- APT45GP120B2DQ2G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3554847-APT45GP120B2DQ2G
- Description:
- IGBT 1200V 113A 625W TMAX
- Datasheet:
- APT45GP120B2DQ2G
Microsemi Corporation APT45GP120B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT45GP120B2DQ2G.
- Factory Lead Time33 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3 Variant
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPOWER MOS 7®
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC1.2kV
- Max Power Dissipation625W
- Current Rating113A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current113A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage3.3V
- Turn On Time47 ns
- Test Condition600V, 45A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 45A
- Continuous Collector Current113A
- Turn Off Time-Nom (toff)230 ns
- IGBT TypePT
- Gate Charge185nC
- Current - Collector Pulsed (Icm)170A
- Td (on/off) @ 25°C18ns/100ns
- Switching Energy900μJ (on), 905μJ (off)
- Gate-Emitter Thr Voltage-Max6V
- Height5.31mm
- Length21.46mm
- Width16.26mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT45GP120B2DQ2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT45GP120B2DQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT45GP120B2DQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT45GP120B2DQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT45GP120B2DQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT45GP120B2DQ2G More Descriptions
Trans IGBT Chip N-CH 1200V 113A 625000mW 3-Pin(3 Tab) T-MAX Tube
IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX
IGBT 1200V 113A 625W TMAX
POWER IGBT TRANSISTOR
new, original packaged
IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX
IGBT 1200V 113A 625W TMAX
POWER IGBT TRANSISTOR
new, original packaged
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