Microsemi Corporation APT37F50S

Name: APT37F50S
Brand: Microsemi Corporation
SKU: 3813739-APT37F50S
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT37F50S

Manufacturer:: Microsemi Corporation

Ventron No:: 3813739-APT37F50S

Description:: MOSFET N-CH 500V 37A D3PAK

ECAD Model:

Datasheet:: APT37F50S

Specifications

Microsemi Corporation APT37F50S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT37F50S.

Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Factory Lead Time
23 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
POWER MOS 8™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
PURE MATTE TIN
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
520W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
150m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
5710pF @ 25V
Current - Continuous Drain (Id) @ 25°C
37A Tc
Gate Charge (Qg) (Max) @ Vgs
145nC @ 10V
Drain to Source Voltage (Vdss)
500V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
37A
Drain-source On Resistance-Max
0.15Ohm
Pulsed Drain Current-Max (IDM)
115A
DS Breakdown Voltage-Min
500V
Avalanche Energy Rating (Eas)
780 mJ
RoHS Status
RoHS Compliant

Description

APT37F50S Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 780 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5710pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 115A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

APT37F50S Features
the avalanche energy rating (Eas) is 780 mJ
a continuous drain current (ID) of 37A
based on its rated peak drain current 115A.
a 500V drain to source voltage (Vdss)

APT37F50S Applications
There are a lot of Microsemi Corporation
APT37F50S applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

APT37F50S More Descriptions

Fredfet Mos8 500 V 37 A To-268 2 To-268 Tube Rohs Compliant: Yes |Microchip APT37F50S
Power MOS 8 FREDFET N-Channel 500V 37A 3-Pin TO-268
MOSFET N-CH 500V 37A D3PAK
POWER FREDFET TRANSISTOR

Certification