APT30GP60LDLG

Microsemi Corporation APT30GP60LDLG

Part Number:
APT30GP60LDLG
Manufacturer:
Microsemi Corporation
Ventron No:
3072272-APT30GP60LDLG
Description:
IGBT 600V 100A 463W TO264
ECAD Model:
Datasheet:
APT30GP60LDLG

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Specifications
Microsemi Corporation APT30GP60LDLG technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT30GP60LDLG.
  • Lifecycle Status
    OBSOLETE (Last Updated: 3 weeks ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-264-3, TO-264AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    463W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    463W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    100A
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    31 ns
  • Test Condition
    400V, 30A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 30A
  • Turn Off Time-Nom (toff)
    164 ns
  • IGBT Type
    PT
  • Gate Charge
    90nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    13ns/55ns
  • Switching Energy
    260μJ (on), 250μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • RoHS Status
    RoHS Compliant
Description
APT30GP60LDLG Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT30GP60LDLG or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT30GP60LDLG. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT30GP60LDLG More Descriptions
Resonant Mode Combi IGBT N-Channel 600V 100A 3-Pin TO-264
Trans IGBT Chip N-CH 600V 100A 3-Pin(3 Tab) TO-264
Insulated Gate Bipolar Transistor - Resonant Mode
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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