APT25GN120B2DQ2G

Microsemi Corporation APT25GN120B2DQ2G

Part Number:
APT25GN120B2DQ2G
Manufacturer:
Microsemi Corporation
Ventron No:
3587453-APT25GN120B2DQ2G
Description:
IGBT 1200V 67A 272W TMAX
ECAD Model:
Datasheet:
APT25GN120B2DQ2G

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Specifications
Microsemi Corporation APT25GN120B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT25GN120B2DQ2G.
  • Factory Lead Time
    29 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    272W
  • Current Rating
    67A
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    67A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Turn On Time
    39 ns
  • Test Condition
    800V, 25A, 4.3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 25A
  • Turn Off Time-Nom (toff)
    560 ns
  • IGBT Type
    NPT, Trench Field Stop
  • Gate Charge
    155nC
  • Current - Collector Pulsed (Icm)
    75A
  • Td (on/off) @ 25°C
    22ns/280ns
  • Switching Energy
    2.15μJ (off)
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
APT25GN120B2DQ2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT25GN120B2DQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT25GN120B2DQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT25GN120B2DQ2G More Descriptions
APT25GN120DQ2 Series 155 nC 1200 V 67 A Field Stop - Trench Gate IGBT - TO-247-3
IGBT Fieldstop Low Frequency Combi 1200 V 25 A TO-247 MAX
Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(3 Tab) T-MAX
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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