Microsemi Corporation APT25GN120B2DQ2G
- Part Number:
- APT25GN120B2DQ2G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3587453-APT25GN120B2DQ2G
- Description:
- IGBT 1200V 67A 272W TMAX
- Datasheet:
- APT25GN120B2DQ2G
Microsemi Corporation APT25GN120B2DQ2G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT25GN120B2DQ2G.
- Factory Lead Time29 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3 Variant
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1999
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureHIGH RELIABILITY
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC1.2kV
- Max Power Dissipation272W
- Current Rating67A
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current67A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Turn On Time39 ns
- Test Condition800V, 25A, 4.3 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A
- Turn Off Time-Nom (toff)560 ns
- IGBT TypeNPT, Trench Field Stop
- Gate Charge155nC
- Current - Collector Pulsed (Icm)75A
- Td (on/off) @ 25°C22ns/280ns
- Switching Energy2.15μJ (off)
- Gate-Emitter Thr Voltage-Max6.5V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
APT25GN120B2DQ2G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT25GN120B2DQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT25GN120B2DQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT25GN120B2DQ2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT25GN120B2DQ2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT25GN120B2DQ2G More Descriptions
APT25GN120DQ2 Series 155 nC 1200 V 67 A Field Stop - Trench Gate IGBT - TO-247-3
IGBT Fieldstop Low Frequency Combi 1200 V 25 A TO-247 MAX
Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(3 Tab) T-MAX
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
IGBT Fieldstop Low Frequency Combi 1200 V 25 A TO-247 MAX
Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(3 Tab) T-MAX
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequ
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