Microsemi Corporation APT17N80SC3G

Name: APT17N80SC3G
Brand: Microsemi Corporation
SKU: 3586696-APT17N80SC3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: APT17N80SC3G

Manufacturer:: Microsemi Corporation

Ventron No:: 3586696-APT17N80SC3G

Description:: MOSFET N-CH 800V 17A D3PAK

ECAD Model:

Datasheet:: APT17N80(B,S)C3

Specifications

Microsemi Corporation APT17N80SC3G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT17N80SC3G.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-268-3, D3Pak (2 Leads Tab), TO-268AA
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
CoolMOS™
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
PURE MATTE TIN
Additional Feature
AVALANCHE RATED
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Reach Compliance Code
unknown
Current Rating
17A
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
208W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
290m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
17A
Drain-source On Resistance-Max
0.29Ohm
Pulsed Drain Current-Max (IDM)
51A
Avalanche Energy Rating (Eas)
670 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

APT17N80SC3G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 670 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2250pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 17A.Peak drain current for this device is 51A, which is its maximum pulsed drain current.Using drive voltage (10V) reduces this device's overall power consumption.

APT17N80SC3G Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 17A
based on its rated peak drain current 51A.

APT17N80SC3G Applications
There are a lot of Microsemi Corporation
APT17N80SC3G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

APT17N80SC3G More Descriptions

MOSFET N-CH 800V 17A D3PAK

Product Comparison

The three parts on the right have similar specifications to APT17N80SC3G.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Number of Pins

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Radiation Hardening

Factory Lead Time

Weight

ECCN Code

Subcategory

Number of Channels

Element Configuration

Drain to Source Breakdown Voltage

Height

Length

Width

View Compare
APT17N80SC3G

Microsemi Corporation

Surface Mount

Surface Mount

TO-268-3, D3Pak (2 Leads Tab), TO-268AA

SILICON

-55°C~150°C TJ

Tube

CoolMOS™

2004

e3

yes

Obsolete

1 (Unlimited)

2

PURE MATTE TIN

AVALANCHE RATED

800V

MOSFET (Metal Oxide)

SINGLE

GULL WING

245

unknown

17A

30

3

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

208W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

290m Ω @ 11A, 10V

3.9V @ 1mA

2250pF @ 25V

17A Tc

90nC @ 10V

10V

±20V

17A

0.29Ohm

51A

670 mJ

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
APT1003RKLLG

Microsemi Corporation

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

POWER MOS 7®

2015

e1

yes

Obsolete

1 (Unlimited)

3

TIN SILVER COPPER

-

1kV

MOSFET (Metal Oxide)

SINGLE

-

-

-

4A

-

3

-

-

1

SINGLE WITH BUILT-IN DIODE

139W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

3 Ω @ 2A, 10V

5V @ 1mA

694pF @ 25V

4A Tc

34nC @ 10V

10V

±30V

4A

3Ohm

-

425 mJ

RoHS Compliant

Lead Free

IN PRODUCTION (Last Updated: 3 weeks ago)

3

139W

8 ns

SWITCHING

4ns

1000V

10 ns

25 ns

TO-220AB

30V

4A

No

-

-

-

-

-

-

-

-

-

-

APT17N80SC3G vs APT1003RKLLG
APT10045JLL

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SOT-227-4, miniBLOC

SILICON

-55°C~150°C TJ

Tube

POWER MOS 7®

-

-

yes

Active

1 (Unlimited)

4

-

UL RECOGNIZED

1kV

MOSFET (Metal Oxide)

UPPER

UNSPECIFIED

-

-

21A

-

4

-

-

1

-

460W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

450m Ω @ 11.5A, 10V

5V @ 2.5mA

4350pF @ 25V

21A Tc

154nC @ 10V

10V

±30V

21A

-

-

2500 mJ

RoHS Compliant

Lead Free

IN PRODUCTION (Last Updated: 1 month ago)

4

460W

10 ns

SWITCHING

5ns

1000V

8 ns

30 ns

-

30V

-

No

19 Weeks

30.000004g

EAR99

FET General Purpose Power

1

Single

1kV

9.6mm

38.2mm

25.4mm

APT17N80SC3G vs APT10045JLL
APT100M50J

Microsemi Corporation

Chassis Mount, Screw

Chassis Mount

SOT-227-4, miniBLOC

SILICON

-55°C~150°C TJ

Tube

-

1997

-

yes

Active

1 (Unlimited)

4

-

AVALANCHE RATED, UL RECOGNIZED

500V

MOSFET (Metal Oxide)

UPPER

UNSPECIFIED

-

-

100A

-

4

-

-

1

-

960W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

38m Ω @ 75A, 10V

5V @ 5mA

24600pF @ 25V

103A Tc

620nC @ 10V

10V

±30V

100A

0.036Ohm

-

3350 mJ

RoHS Compliant

Lead Free

IN PRODUCTION (Last Updated: 1 month ago)

4

960W

105 ns

SWITCHING

125ns

-

90 ns

280 ns

-

30V

-

No

18 Weeks

30.000004g

EAR99

-

1

Single

500V

9.6mm

38.2mm

25.4mm

APT17N80SC3G vs APT100M50J