Microsemi Corporation APT15GT120BRDQ1G
- Part Number:
- APT15GT120BRDQ1G
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3587176-APT15GT120BRDQ1G
- Description:
- IGBT 1200V 36A 250W TO247
- Datasheet:
- APT15GT120BRDQ1G
Microsemi Corporation APT15GT120BRDQ1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT15GT120BRDQ1G.
- Factory Lead Time29 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesThunderbolt IGBT®
- Published1999
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN SILVER COPPER
- Additional FeatureHIGH SPEED
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC1.2kV
- Max Power Dissipation250W
- Current Rating36A
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current36A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage3.2V
- Turn On Time21 ns
- Test Condition800V, 15A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 15A
- Continuous Collector Current36A
- Turn Off Time-Nom (toff)137 ns
- IGBT TypeNPT
- Gate Charge105nC
- Current - Collector Pulsed (Icm)45A
- Td (on/off) @ 25°C10ns/85ns
- Switching Energy585μJ (on), 260μJ (off)
- Gate-Emitter Voltage-Max30V
- Gate-Emitter Thr Voltage-Max6.5V
- Height5.31mm
- Length21.46mm
- Width16.26mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeContains Lead
APT15GT120BRDQ1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT15GT120BRDQ1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT15GT120BRDQ1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT15GT120BRDQ1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT15GT120BRDQ1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT15GT120BRDQ1G More Descriptions
Trans IGBT Chip N-CH 1200V 36A 250000mW 3-Pin(3 Tab) TO-247 Tube
APT15GTxx Series 1200 V 36 A Through Hole Thunderbolt IGBT - TO-247-3
IGBT NPT Medium Frequency Combi 1200 V 15 A TO-247
Insulated Gate Bipolar Transistor - NPT Standard Speed
APT15GTxx Series 1200 V 36 A Through Hole Thunderbolt IGBT - TO-247-3
IGBT NPT Medium Frequency Combi 1200 V 15 A TO-247
Insulated Gate Bipolar Transistor - NPT Standard Speed
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