APT15GT120BRDQ1G

Microsemi Corporation APT15GT120BRDQ1G

Part Number:
APT15GT120BRDQ1G
Manufacturer:
Microsemi Corporation
Ventron No:
3587176-APT15GT120BRDQ1G
Description:
IGBT 1200V 36A 250W TO247
ECAD Model:
Datasheet:
APT15GT120BRDQ1G

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Specifications
Microsemi Corporation APT15GT120BRDQ1G technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation APT15GT120BRDQ1G.
  • Factory Lead Time
    29 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    Thunderbolt IGBT®
  • Published
    1999
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    HIGH SPEED
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1.2kV
  • Max Power Dissipation
    250W
  • Current Rating
    36A
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    36A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    3.2V
  • Turn On Time
    21 ns
  • Test Condition
    800V, 15A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.6V @ 15V, 15A
  • Continuous Collector Current
    36A
  • Turn Off Time-Nom (toff)
    137 ns
  • IGBT Type
    NPT
  • Gate Charge
    105nC
  • Current - Collector Pulsed (Icm)
    45A
  • Td (on/off) @ 25°C
    10ns/85ns
  • Switching Energy
    585μJ (on), 260μJ (off)
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Height
    5.31mm
  • Length
    21.46mm
  • Width
    16.26mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Contains Lead
Description
APT15GT120BRDQ1G Overview
This product is manufactured by Microsemi Corporation and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet APT15GT120BRDQ1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of APT15GT120BRDQ1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
APT15GT120BRDQ1G More Descriptions
Trans IGBT Chip N-CH 1200V 36A 250000mW 3-Pin(3 Tab) TO-247 Tube
APT15GTxx Series 1200 V 36 A Through Hole Thunderbolt IGBT - TO-247-3
IGBT NPT Medium Frequency Combi 1200 V 15 A TO-247
Insulated Gate Bipolar Transistor - NPT Standard Speed
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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