Alpha & Omega Semiconductor Inc. AOTF7N65
- Part Number:
- AOTF7N65
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Ventron No:
- 2850320-AOTF7N65
- Description:
- MOSFET N-CH 650V 7A TO220F
- Datasheet:
- AOTF7N65
Alpha & Omega Semiconductor Inc. AOTF7N65 technical specifications, attributes, parameters and parts with similar specifications to Alpha & Omega Semiconductor Inc. AOTF7N65.
- Factory Lead Time18 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max38.5W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.56 Ω @ 3.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1060pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)7A
- RoHS StatusROHS3 Compliant
AOTF7N65 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
AOTF7N65 Features
a continuous drain current (ID) of 7A
a 650V drain to source voltage (Vdss)
AOTF7N65 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOTF7N65 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
AOTF7N65 Features
a continuous drain current (ID) of 7A
a 650V drain to source voltage (Vdss)
AOTF7N65 Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOTF7N65 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
AOTF7N65 More Descriptions
Trans MOSFET N-CH 650V 7A 3-Pin(3 Tab) TO-220F
FPGA Cyclone® IV E Family 55856 Cells 60nm Technology 1.2V 484-Pin FBGA
650V N-Channel MOSFET, TO-220F-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 7A I(D), 650V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FPGA Cyclone® IV E Family 55856 Cells 60nm Technology 1.2V 484-Pin FBGA
650V N-Channel MOSFET, TO-220F-3, RoHSAlpha & Omega Semiconductor SCT
Power Field-Effect Transistor, 7A I(D), 650V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to AOTF7N65.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusNumber of PinsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsPower DissipationGate to Source Voltage (Vgs)Lead FreeSurface MountSubcategoryReach Compliance CodeConfigurationOperating ModeDrain Current-Max (Abs) (ID)View Compare
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AOTF7N6518 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTube2009Active1 (Unlimited)MOSFET (Metal Oxide)38.5W TcN-Channel1.56 Ω @ 3.5A, 10V4.5V @ 250μA1060pF @ 25V7A Tc23nC @ 10V650V10V±30V7AROHS3 Compliant--------------
-
18 WeeksThrough HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTube2009Active1 (Unlimited)MOSFET (Metal Oxide)50W TcN-Channel720m Ω @ 6A, 10V4.5V @ 250μA2150pF @ 25V12A Tc48nC @ 10V650V10V±30V12AROHS3 Compliant3NOT SPECIFIEDNOT SPECIFIED150W30VContains Lead------
-
--Through HoleTO-220-3 Full Pack-55°C~150°C TJTube-Obsolete1 (Unlimited)MOSFET (Metal Oxide)35W TcN-Channel520m Ω @ 6A, 10V5V @ 250μA1954pF @ 100V12A Tc50nC @ 10V600V10V±30V-RoHS Compliant-------NOFET General Purpose PowercompliantSingleENHANCEMENT MODE12A
-
-Through HoleThrough HoleTO-220-3 Full Pack-55°C~150°C TJTube2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)43W TcN-Channel700m Ω @ 5A, 10V5V @ 250μA1346pF @ 100V10A Tc35nC @ 10V600V10V±30V10ARoHS Compliant--------FET General Purpose Power-SingleENHANCEMENT MODE-
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